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I-Crystal Silicon Ingot enye

Inkcazo

I-Crystal Silicon Ingot enyeis idla ngokukhula njenge-ingot enkulu ye-cylindrical nge-doping echanekileyo kunye nobuchwepheshe bokutsala i-Czochralski CZ, i-Magnetic field induced Czochralski MCZ kunye neendlela ze-Floating Zone FZ.Indlela ye-CZ yeyona isetyenziswa kakhulu ekukhuleni kwe-silicon crystal ye-ingots enkulu ye-cylindrical kububanzi ukuya kwi-300mm esetyenziswa kushishino lwe-elektroniki ukwenza izixhobo ze-semiconductor.Indlela ye-MCZ yintlukwano yendlela ye-CZ apho i-magnetic field eyenziwe yi-electromagnetic, enokufikelela kwi-concentration ye-oksijini ephantsi ngokuthelekisayo, i-concentration ephantsi yokungcola, i-dislocation ephantsi kunye ne-uniform resistivity variation.Indlela ye-FZ iququzelela ukufezekiswa kwe-resistiveivity ephezulu ngaphezu kwe-1000 Ω-cm kunye ne-crystal ephezulu ecocekileyo kunye nomxholo ophantsi we-oxygen.

Ukuhanjiswa

ISingle Crystal Silicon Ingot CZ, MCZ, FZ okanye FZ NTD enohlobo lwe-n okanye i-p-type conductivity kwi-Western Minmetals (SC) Corporation ingahanjiswa ngobukhulu be-50mm, 75mm, 100mm, 125mm, 150mm kunye ne-200mm ububanzi (2, 3) , , 4, 6 kunye ne-intshi ye-8), i-orientation <100>, <110>, <111> kunye nomhlaba osekelwe kwiphakheji yeplastiki ngaphakathi kunye nebhokisi yebhokisi ngaphandle, okanye njengoko kucacisiwe ngokwezifiso ukufikelela kwisisombululo esipheleleyo.

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Inkcazo yobuGcisa

I-Crystal Silicon Ingot enye

I-Crystal Silicon enye Ingot CZ, MCZ, FZ okanye FZ NTDkunye nohlobo lwe-n okanye i-p-type conductivity kwi-Western Minmetals (SC) Corporation ingahanjiswa ngobukhulu be-50mm, 75mm, 100mm, 125mm, 150mm kunye ne-200mm ububanzi (2, 3, 4, 6 kunye ne-intshi yesi-8), i-orientation <100 >, <110>, <111> kunye nomphezulu obekwe kwiphakheji yeplastiki ngaphakathi kunye nebhokisi yebhokisi ngaphandle, okanye njengoko kucacisiwe ngokwezifiso ukufikelela kwisisombululo esifanelekileyo.

Hayi.	Izinto	Inkcazo esemgangathweni
1	Ubungakanani	2 ", 3", 4", 5", 6", 8", 9.5", 10", 12"
2	Ububanzi mm	50.8-241.3, okanye njengoko kufuneka
3	Indlela Yokukhula	CZ, MCZ, FZ, FZ-NTD
4	Uhlobo lokuqhuba	Uhlobo lwe-P / i-Boron edibeneyo, uhlobo lwe-N / i-Phosphide edibeneyo okanye e-Un-doped
5	Ubude mm	≥180 okanye njengoko kufuneka
6	Ukuqhelaniswa	<100>, <110>, <111>
7	Ukuxhathisa Ω-cm	Njengoko kufuneka
8	Umxholo weCarbon a/cm³	≤5E16 okanye njengoko kufuneka
9	Umxholo weoksijini a/cm³	≤1E18 okanye njengoko kufuneka
10	Ungcoliseko lweMetal a/cm³	<5E10 (Cu, Cr, Fe, Ni) okanye <3E10 (Al, Ca, Na, K, Zn)
11	Ukupakisha	Isikhwama seplastiki ngaphakathi, i-plywood case okanye ibhokisi yebhokisi ngaphandle.

Uphawu	Si
Inombolo yeAtom	14
Ubunzima beAtom	28.09
Udidi lweNqanaba	Metalloid
Iqela, Ixesha, Block	14, 3, P
Ubume beCrystal	Idayimani
Umbala	Ingwevu emnyama
Indawo yokunyibilika	1414°C, 1687.15 K
Indawo yokubilisa	3265°C, 3538.15 K
Ukuxinana kwi-300K	2.329 g/cm³
Ukuxhathisa kwangaphakathi	3.2E5 Ω-cm
Inombolo yeCAS	7440-21-3
Inombolo yeEC	231-130-8

I-Crystal Silicon Ingot enye, xa ikhulile ngokupheleleyo kwaye ifanelekele ukumelana kwayo, umxholo wokungcola, ukugqibelela kwekristale, ubungakanani kunye nobunzima, isekelwe ngokusebenzisa amavili edayimani ukuze ibe yi-cylinder egqibeleleyo ukuya kwi-diameter echanekileyo, emva koko iqhube inkqubo yokuthunga ukususa iziphene zoomatshini ezishiywe yinkqubo yokusila. .Emva koko i-ingot ye-cylindrical iyasikwa kwiibhloko ezinobude obuthile, kwaye inikwe i-notch kunye ne-primary okanye i-flat yesibini nge-automated wafer handling systems ukulungelelaniswa ukuchonga i-crystallographic orientation kunye ne-conductivity phambi kwenkqubo ye-wafer slicing ezantsi.