IGallium Phosphide GaP

Inkcazo

I-Gallium Phosphide GaP, i-semiconductor ebalulekileyo yeepropati zombane ezizodwa njengezinye izinto ze-III-V ezixutywe, i-crystallizes kwi-thermodynamically stable cubic structure ye-ZB, i-orenji-yellow semitransparent crystal material kunye ne-gap yebhendi engathanga ngqo ye-2.26 eV (300K), eyi-crystal idityaniswe ukusuka kwi-6N 7N i-gallium ecocekileyo ephezulu kunye ne-phosphorus, kwaye ikhule ibe yikristale enye ngobuchule be-Liquid Encapsulated Czochralski (LEC).Ikristale ye-Gallium Phosphide ifakwe isulfure okanye i-tellurium ukuze ifumane i-n-type semiconductor, kunye ne-zinc doped njenge-p-type conductivity ukuze iqhubeke nokuyilwa kwi-wafer enqwenelekayo, enezicelo kwi-optical system, i-electronics kunye nezinye izixhobo ze-optoelectronics.Single Crystal GaP wafer ingalungiswa Epi-Ready yakho LPE, MOCVD kunye MBE epitaxial isicelo.Umgangatho ophezulu wekristale eyodwa ye-crystal Gallium phosphide GaP wafer p-uhlobo, uhlobo lwe-n okanye ukuhanjiswa okungagqitywanga kwi-Western Minmetals (SC) Corporation inokubonelelwa ngobungakanani be-2″ kunye ne-3" (50mm, 75mm ububanzi), i-orientation <100>, <111 > ngokugqitywa komphezulu wenkqubo yokusikwa, epolishiwe okanye elungele i-epi.

Usetyenziso

Ngokusebenza okuphantsi kwangoku kunye nokusebenza okuphezulu ekukhanyeni, i-Gallium phosphide GaP wafer ifanelekile kwiinkqubo zokubonisa ukukhanya njengexabiso eliphantsi elibomvu, i-orenji, kunye ne-green light-emitting diodes (ii-LED) kunye nokukhanya kwe-LCD etyheli kunye eluhlaza njl kunye nee-chips ze-LED ezenziwe nge. Ukukhanya okuphantsi ukuya kokuphakathi, i-GaP yamkelwe ngokubanzi njengesiseko se-infrared sensors kunye nokubeka iliso kwiikhamera.

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Inkcazo yobuGcisa

IGallium Phosphide GaP

Umgangatho ophezulu wekristale eyodwa ye-Gallium Phosphide GaP wafer okanye i-substrate p-type, uhlobo lwe-n okanye ukuhanjiswa okungagqitywanga kwi-Western Minmetals (SC) Corporation inokubonelelwa ngobukhulu be-2″ kunye ne-3" (50mm, 75mm) ububanzi, i-orientation <100> , <111> kunye nokugqitywa komphezulu we-as-cut, i-lapped, i-etched, i-polishiwe, i-epi-ready processed kwi-container ye-wafer enye etywinwe kwi-aluminium composite bag okanye njengoko kucacisiwe kwisisombululo esigqibeleleyo.

Hayi.	Izinto	Inkcazo esemgangathweni
1	Ubungakanani beGaP	2"
2	Ububanzi mm	50.8 ± 0.5
3	Indlela Yokukhula	I-LEC
4	Uhlobo lokuqhuba	P-udidi/Zn-doped, N-uhlobo/(S, Si,Te)-doped, Un-doped
5	Ukuqhelaniswa	<1 1 1> ± 0.5 °
6	Ukutyeba μm	(300-400) ± 20
7	Ukuxhathisa Ω-cm	0.003-0.3
8	IFlethi yokuqhelanisa (OF) mm	16±1
9	I-Identification Flat (IF) mm	8±1
10	Ukuhamba kweHolo cm2 / Vs min	100
11	Ugxininiso lomthwali cm^-3	(2-20) E17
12	Dislocation Uxinaniso cm^-2max	2.00E+05
13	Umphezulu Gqiba	P/E, P/P
14	Ukupakisha	Isikhongozeli se-wafer esinye esitywinwe kwingxowa ye-aluminiyam ehlanganisiweyo, ibhokisi yebhokisi ngaphandle

Ifomula yomgca	I-GaP
Ubunzima beMolekyuli	100.7
Ubume beCrystal	Umxube weZinc
Imbonakalo	I-Orenji eqinileyo
Indawo yokunyibilika	N / A
Indawo yokubilisa	N / A
Ukuxinana kwi-300K	4.14 g/cm³
Umsantsa wamandla	2.26 eV
Ukuxhathisa kwangaphakathi	N / A
Inombolo yeCAS	12063-98-8
Inombolo yeEC	235-057-2

I-Gallium Phosphide GaP Wafer, ngokusebenza okuphantsi kwangoku kunye nokusebenza okuphezulu ekukhanyeni ukukhanya, ifanelekile kwiinkqubo zokubonisa ukukhanya njengexabiso eliphantsi elibomvu, i-orenji, kunye ne-green light-emitting diodes (i-LED) kunye ne-backlight ye-LCD ephuzi kunye eluhlaza njl kunye ne-LED chips yokuvelisa kunye ne-low to medium. Ukukhanya, i-GaP yamkelwe ngokubanzi njengesiseko se-infrared sensors kunye nokubeka iliso kwiikhamera.