Gallium Antimonide GaSb

Inkcazo

Gallium Antimonide GaSb, i-semiconductor yeqela le-III-V i-compounds ene-zinc-blende lattice structure, idityaniswe yi-6N 7N i-gallium ephezulu yokucoca kunye nezinto ze-antimony, kwaye ikhule ibe yikristale nge-LEC indlela esuka kwi-polycrystalline ingot efriziwe okanye indlela ye-VGF nge-EPD<1000cm^-3.I-wafer ye-GaSb inokunqunyulwa kwaye yenziwe emva koko ukusuka kwi-ingot ye-crystalline enye kunye nokufana okuphezulu kweeparamitha zombane, ulwakhiwo olulodwa kunye noluguquguqukayo lwe-lattice, kunye noxinano oluphantsi, isalathisi esiphezulu se-refractive kunezinye iikhompawundi ezingezizo ezentsimbi.I-GaSb inokucutshungulwa ngokhetho olubanzi kwi-orientation echanekileyo okanye evaliweyo, ugxininiso oluphantsi okanye oluphezulu lwe-doped, ukugqiba okulungileyo kunye ne-MBE okanye i-MOCVD epitaxial ukukhula.I-substrate ye-Gallium Antimonide isetyenziswa kwezona zixhobo ziphezulu ze-photo-optic kunye ne-optoelectronic ezinjengokwenziwa kwee-photo detectors, i-infrared detectors kunye nobomi obude, uvakalelo oluphezulu kunye nokuthembeka, icandelo le-photoresist, ii-LED ze-infrared kunye ne-lasers, i-transistors, i-thermal photovoltaic cell. kunye neenkqubo ze-thermo-photovoltaic.

Ukuhanjiswa

I-Gallium Antimonide GaSb kwi-Western Minmetals (SC) Corporation inokunikezelwa ngohlobo lwe-n, uhlobo lwe-p kunye ne-conductivity engagungqiyo ye-semi-insulating kubukhulu be-2” 3” kunye ne-4” (50mm, 75mm, 100mm) ububanzi, ukuziqhelanisa <111> okanye <100>, kunye nokugqitywa komphezulu we-wafer of as-cut, etched, polished or high quality epitaxy ready finishes.Zonke izilayi zibhalwe nge-laser ukuze zichazwe.Ngeli xesha, i-polycrystalline gallium antimonide GaSb lump nayo ilungiselelwe ngokwesicelo kwisisombululo esigqibeleleyo.

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Iithegi

Inkcazo yobuGcisa

IGallium Antimonide

I-GaSb

Gallium Antimonide GaSbI-substrate isetyenziswa kwezona zixhobo ziphezulu zefoto-optic kunye ne-optoelectronic applications ezinje ngokuyilwa kwee-photo detectors, ii-infrared detectors eziphila ubomi obude, ubuntununtunu obuphezulu kunye nokuthembeka, icandelo le-photoresist, ii-LED ze-infrared kunye ne-lasers, ii-transistors, i-thermal photovoltaic cell kunye ne-thermo. Iinkqubo ze-photovoltaic.

	Izinto	Inkcazo esemgangathweni
1	Ubungakanani	2"	3"	4"
2	Ububanzi mm	50.5±0.5	76.2±0.5	100±0.5
3	Indlela Yokukhula	I-LEC	I-LEC	I-LEC
4	Ukuqhuba	P-udidi/Zn-doped, Un-doped, N-uhlobo/Te-doped
5	Ukuqhelaniswa	(100)±0.5°, (111)±0.5°
6	Ukutyeba μm	500±25	600±25	800±25
7	Ukuqhelaniswa neFlethi mm	16±2	22±1	32.5±1
8	Uchonga I-Flat mm	8±1	11±1	18±1
9	Ukuhamba cm2 / Vs	200-3500 okanye njengoko kufuneka
10	Ugxininiso lwe-Carrier cm-3	(1-100)E17 okanye njengoko kufuneka
11	TTV μm max	15	15	15
12	Zithobe μm max	15	15	15
13	Warp μm max	20	20	20
14	I-Dislocation Density cm-2 max	500	1000	2000
15	Umphezulu Gqiba	P/E, P/P	P/E, P/P	P/E, P/P
16	Ukupakisha	Isikhongozeli se-wafer esinye esitywinwe kwingxowa yeAluminiyam.

Ifomula yomgca	I-GaSb
Ubunzima beMolekyuli	191.48
Ubume beCrystal	Umxube weZinc
Imbonakalo	Ikristale engwevu eqinileyo
Indawo yokunyibilika	710°C
Indawo yokubilisa	N / A
Ukuxinana kwi-300K	5.61 g/cm³
Umsantsa wamandla	0.726 eV
Ukuxhathisa kwangaphakathi	1E3 Ω-cm
Inombolo yeCAS	12064-03-8
Inombolo yeEC	235-058-8

Gallium Antimonide GaSbeWestern Minmetals (SC) Corporation inokubonelelwa ngohlobo lwe-n, uhlobo lwe-p kunye ne-unndoped semi-insulating conductivity ngobukhulu be-2” 3” kunye ne-4” (50mm, 75mm, 100mm) ubukhulu, i-orientation <111> okanye <100 >, kunye nokugqitywa komphezulu we-wafer of as-cut, etched, polished or high quality epitaxy finishes.Zonke izilayi zibhalwe nge-laser ukuze zichazwe.Ngeli xesha, i-polycrystalline gallium antimonide GaSb lump nayo ilungiselelwe ngokwesicelo kwisisombululo esigqibeleleyo.