Gallium Arsenide GaAs

Inkcazo

Gallium ArsenideIiGaAs yi ibhendi ngqo umsantsa ikhompawundi semiconductor yeqela III-V edityaniswe ubuncinane 6N 7N high ubunyulu gallium kunye element arsenic, kwaye ikhule crystal yi VGF okanye inkqubo LEC ukusuka high ubunyulu polycrystalline gallium arsenide, imbonakalo grey umbala, cubic crystals nesakhiwo zinc-blende.Nge-doping ye-carbon, i-silicon, i-tellurium okanye i-zinc ukufumana i-n-type okanye i-p-type kunye ne-semi-insulating conductivity ngokulandelanayo, i-crystal ye-InAs ye-cylindrical inokucutywa kwaye yenziwe ibe yinto engenanto kunye ne-wafer in as-cut, etched, polished or epi. -ukulungele MBE okanye MOCVD ukukhula epitaxial.I-wafer ye-Gallium Arsenide isetyenziswa ikakhulu ukwenza izixhobo zombane ezifana ne-infrared light-emitting diode, i-laser diode, iifestile zamehlo, ii-FETs ze-field-effect transistors, ii-ICs zedijithali kunye neeseli zelanga.Amacandelo e-GaAs aluncedo kwiifrikhwekhwekhwethe zikanomathotholo eziphezulu kunye nosetyenziso olukhawulezayo lokutshintsha i-elektroniki, usetyenziso lolwandiso olubuthathaka.Ngaphaya koko, i-Gallium Arsenide substrate sisixhobo esifanelekileyo sokwenziwa kwamalungu e-RF, amaza e-microwave kunye ne-monolithic ICs, kunye nezixhobo ze-LED kunxibelelwano lwamehlo kunye neenkqubo zolawulo lokushukuma kwayo kweholo, amandla aphezulu kunye nokuzinza kobushushu.

Ukuhanjiswa

I-Gallium Arsenide GaAs kwi-Western Minmetals (SC) Corporation inokubonelelwa njenge-polycrystalline iqhuma okanye i-crystal wafer enye kwi-wafers as-cut, etched, epholisiweyo, okanye e-epi-readyready kwisayizi ye-2" 3" 4" kunye ne-6" (50mm, 75mm, 100mm, 150mm) ububanzi, kunye nohlobo lwe-p, uhlobo lwe-n okanye i-semi-insulating conductivity, kunye ne-<111> okanye <100> i-orientation.Ukucaciswa okulungiselelweyo sisisombululo esigqibeleleyo kubathengi bethu kwihlabathi liphela.

Buza ngoku

Iinkcukacha

Iithegi

Inkcazo yobuGcisa

Gallium Arsenide

IiGaAs

Gallium Arsenide GaAsiiwafers ikakhulu zisetyenziselwa ukwenza izixhobo zombane ezifana ne-infrared light-emitting diode, laser diodes, optical windows, field-effect transistors FETs, linear of digital ICs kunye neeseli zelanga.Amacandelo e-GaAs aluncedo kwiifrikhwekhwekhwethe zikanomathotholo eziphezulu kunye nosetyenziso olukhawulezayo lokutshintsha i-elektroniki, usetyenziso lolwandiso olubuthathaka.Ngaphaya koko, i-Gallium Arsenide substrate sisixhobo esifanelekileyo sokwenziwa kwamalungu e-RF, amaza e-microwave kunye ne-monolithic ICs, kunye nezixhobo ze-LED kunxibelelwano lwamehlo kunye neenkqubo zolawulo lokushukuma kwayo kweholo, amandla aphezulu kunye nokuzinza kobushushu.

Hayi.	Izinto	Inkcazo esemgangathweni
1	Ubungakanani	2"	3"	4"	6"
2	Ububanzi mm	50.8±0.3	76.2±0.3	100±0.5	150±0.5
3	Indlela Yokukhula	VGF	VGF	VGF	VGF
4	Uhlobo lokuqhuba	N-Type/Si okanye Te-doped, P-Type/Zn-doped, Semi-Insulating/Un-doped
5	Ukuqhelaniswa	(100)±0.5°	(100)±0.5°	(100)±0.5°	(100)±0.5°
6	Ukutyeba μm	350±25	625±25	625±25	650±25
7	Ukuqhelaniswa neFlethi mm	17±1	22±1	32±1	Inotshi
8	Uchonga I-Flat mm	7±1	12±1	18±1	-
9	Ukuxhathisa Ω-cm	(1-9)E(-3) yohlobo lwe-p okanye u-n-udidi, (1-10)E8 kwi-semi-insulating
10	Ukuhamba cm2/vs	50-120 yohlobo lwe-p, (1-2.5)E3 yohlobo lwe-n, ≥4000 ye-semi-insulating
11	Ugxininiso lwe-Carrier cm-3	(5-50)E18 yohlobo lwe-p, (0.8-4)E18 ye-n-uhlobo
12	TTV μm max	10	10	10	10
13	Zithobe μm max	30	30	30	30
14	Warp μm max	30	30	30	30
15	EPD cm-2	5000	5000	5000	5000
16	Umphezulu Gqiba	P/E, P/P	P/E, P/P	P/E, P/P	P/E, P/P
17	Ukupakisha	Isikhongozeli se-wafer esinye esitywinwe kwingxowa ye-aluminiyam ehlanganisiweyo.
18	Amagqabantshintshi	Iwafa yeGaAs yomgangatho woomatshini nayo iyafumaneka xa uceliwe.

Ifomula yomgca	IiGaAs
Ubunzima beMolekyuli	144.64
Ubume beCrystal	Umxube weZinc
Imbonakalo	Ikristale engwevu eqinileyo
Indawo yokunyibilika	1400°C, 2550°F
Indawo yokubilisa	N / A
Ukuxinana kwi-300K	5.32 g/cm³
Umsantsa wamandla	1.424 eV
Ukuxhathisa kwangaphakathi	3.3E8 Ω-cm
Inombolo yeCAS	1303-00-0
Inombolo yeEC	215-114-8

Gallium Arsenide GaAseWestern Minmetals (SC) Corporation inokubonelelwa njenge-polycrystalline iqhuma okanye i-crystal wafer enye kwi-wafers egayiweyo, eqoshiwe, epolishiwe, okanye e-epi-ready kubukhulu be-2" 3" 4" kunye ne-6" (50mm, 75mm, 100mm , 150mm) ububanzi, kunye nohlobo lwe-p, uhlobo lwe-n okanye i-semi-insulating conductivity, kunye ne-<111> okanye <100> i-orientation.Ukucaciswa okulungiselelweyo sisisombululo esigqibeleleyo kubathengi bethu kwihlabathi liphela.