Inkcazo
Gallium ArsenideIiGaAs yi ibhendi ngqo umsantsa ikhompawundi semiconductor yeqela III-V edityaniswe ubuncinane 6N 7N high ubunyulu gallium kunye element arsenic, kwaye ikhule crystal yi VGF okanye inkqubo LEC ukusuka high ubunyulu polycrystalline gallium arsenide, imbonakalo grey umbala, cubic crystals nesakhiwo zinc-blende.Nge-doping ye-carbon, i-silicon, i-tellurium okanye i-zinc ukufumana i-n-type okanye i-p-type kunye ne-semi-insulating conductivity ngokulandelanayo, i-crystal ye-InAs ye-cylindrical inokucutywa kwaye yenziwe ibe yinto engenanto kunye ne-wafer in as-cut, etched, polished or epi. -ukulungele MBE okanye MOCVD ukukhula epitaxial.I-wafer ye-Gallium Arsenide isetyenziswa ikakhulu ukwenza izixhobo zombane ezifana ne-infrared light-emitting diode, i-laser diode, iifestile zamehlo, ii-FETs ze-field-effect transistors, ii-ICs zedijithali kunye neeseli zelanga.Amacandelo e-GaAs aluncedo kwiifrikhwekhwekhwethe zikanomathotholo eziphezulu kunye nosetyenziso olukhawulezayo lokutshintsha i-elektroniki, usetyenziso lolwandiso olubuthathaka.Ngaphaya koko, i-Gallium Arsenide substrate sisixhobo esifanelekileyo sokwenziwa kwamalungu e-RF, amaza e-microwave kunye ne-monolithic ICs, kunye nezixhobo ze-LED kunxibelelwano lwamehlo kunye neenkqubo zolawulo lokushukuma kwayo kweholo, amandla aphezulu kunye nokuzinza kobushushu.
Ukuhanjiswa
I-Gallium Arsenide GaAs kwi-Western Minmetals (SC) Corporation inokubonelelwa njenge-polycrystalline iqhuma okanye i-crystal wafer enye kwi-wafers as-cut, etched, epholisiweyo, okanye e-epi-readyready kwisayizi ye-2" 3" 4" kunye ne-6" (50mm, 75mm, 100mm, 150mm) ububanzi, kunye nohlobo lwe-p, uhlobo lwe-n okanye i-semi-insulating conductivity, kunye ne-<111> okanye <100> i-orientation.Ukucaciswa okulungiselelweyo sisisombululo esigqibeleleyo kubathengi bethu kwihlabathi liphela.
Inkcazo yobuGcisa
Gallium Arsenide GaAsiiwafers ikakhulu zisetyenziselwa ukwenza izixhobo zombane ezifana ne-infrared light-emitting diode, laser diodes, optical windows, field-effect transistors FETs, linear of digital ICs kunye neeseli zelanga.Amacandelo e-GaAs aluncedo kwiifrikhwekhwekhwethe zikanomathotholo eziphezulu kunye nosetyenziso olukhawulezayo lokutshintsha i-elektroniki, usetyenziso lolwandiso olubuthathaka.Ngaphaya koko, i-Gallium Arsenide substrate sisixhobo esifanelekileyo sokwenziwa kwamalungu e-RF, amaza e-microwave kunye ne-monolithic ICs, kunye nezixhobo ze-LED kunxibelelwano lwamehlo kunye neenkqubo zolawulo lokushukuma kwayo kweholo, amandla aphezulu kunye nokuzinza kobushushu.
Hayi. | Izinto | Inkcazo esemgangathweni | |||
1 | Ubungakanani | 2" | 3" | 4" | 6" |
2 | Ububanzi mm | 50.8±0.3 | 76.2±0.3 | 100±0.5 | 150±0.5 |
3 | Indlela Yokukhula | VGF | VGF | VGF | VGF |
4 | Uhlobo lokuqhuba | N-Type/Si okanye Te-doped, P-Type/Zn-doped, Semi-Insulating/Un-doped | |||
5 | Ukuqhelaniswa | (100)±0.5° | (100)±0.5° | (100)±0.5° | (100)±0.5° |
6 | Ukutyeba μm | 350±25 | 625±25 | 625±25 | 650±25 |
7 | Ukuqhelaniswa neFlethi mm | 17±1 | 22±1 | 32±1 | Inotshi |
8 | Uchonga I-Flat mm | 7±1 | 12±1 | 18±1 | - |
9 | Ukuxhathisa Ω-cm | (1-9)E(-3) yohlobo lwe-p okanye u-n-udidi, (1-10)E8 kwi-semi-insulating | |||
10 | Ukuhamba cm2/vs | 50-120 yohlobo lwe-p, (1-2.5)E3 yohlobo lwe-n, ≥4000 ye-semi-insulating | |||
11 | Ugxininiso lwe-Carrier cm-3 | (5-50)E18 yohlobo lwe-p, (0.8-4)E18 ye-n-uhlobo | |||
12 | TTV μm max | 10 | 10 | 10 | 10 |
13 | Zithobe μm max | 30 | 30 | 30 | 30 |
14 | Warp μm max | 30 | 30 | 30 | 30 |
15 | EPD cm-2 | 5000 | 5000 | 5000 | 5000 |
16 | Umphezulu Gqiba | P/E, P/P | P/E, P/P | P/E, P/P | P/E, P/P |
17 | Ukupakisha | Isikhongozeli se-wafer esinye esitywinwe kwingxowa ye-aluminiyam ehlanganisiweyo. | |||
18 | Amagqabantshintshi | Iwafa yeGaAs yomgangatho woomatshini nayo iyafumaneka xa uceliwe. |
Ifomula yomgca | IiGaAs |
Ubunzima beMolekyuli | 144.64 |
Ubume beCrystal | Umxube weZinc |
Imbonakalo | Ikristale engwevu eqinileyo |
Indawo yokunyibilika | 1400°C, 2550°F |
Indawo yokubilisa | N / A |
Ukuxinana kwi-300K | 5.32 g/cm3 |
Umsantsa wamandla | 1.424 eV |
Ukuxhathisa kwangaphakathi | 3.3E8 Ω-cm |
Inombolo yeCAS | 1303-00-0 |
Inombolo yeEC | 215-114-8 |
Gallium Arsenide GaAseWestern Minmetals (SC) Corporation inokubonelelwa njenge-polycrystalline iqhuma okanye i-crystal wafer enye kwi-wafers egayiweyo, eqoshiwe, epolishiwe, okanye e-epi-ready kubukhulu be-2" 3" 4" kunye ne-6" (50mm, 75mm, 100mm , 150mm) ububanzi, kunye nohlobo lwe-p, uhlobo lwe-n okanye i-semi-insulating conductivity, kunye ne-<111> okanye <100> i-orientation.Ukucaciswa okulungiselelweyo sisisombululo esigqibeleleyo kubathengi bethu kwihlabathi liphela.
Iingcebiso zokuthengwa kwempahla
Gallium Arsenide Wafer