I-Gallium oxide

Inkcazo

Gallium oxide Ga₂O₃I-99.99%, 99.999% kunye ne-99.9999% 4N 5N 6N, umgubo omhlophe oqinileyo kuzo zombini izigaba ze-α kunye ne-β crystal, i-CAS 12024-21-4, ubunzima be-molecular 187.44, i-melting point 1740 ° C, i-insoluble kumanzi amaninzi kodwa i-asidi sisixhobo sesemiconductor yeoksidi esobala eneempawu ezigqwesileyo zebhendi enkulu kakhulu-isithuba esingaphezulu kwe-4.9eV, kunye nokufumaneka kobukhulu obukhulu, i-substrates yendalo ekumgangatho ophezulu eveliswe kwikristale enye enyibilikayo.Gallium oxide Ga₂O₃inethemba elibanzi lokusetyenziswa kwishishini le-optoelectronic elifana ne-insulating layer ye-Ga-based semiconductor materials, njenge-ultraviolet filters, njenge-chemical probes ye-oksijini, umqobo wokukhusela ukudibanisa okuqinileyo, izixhobo ze-optic semiconductor kunye nezicelo ze-ceramic.I-Gallium oxide ikwasetyenziselwa ukukhanyisa ukukhanya kwee-diode ze-LED ze-fluorescent powder, i-reagent yokucoceka okuphezulu, kunye ne-laser kunye nezinye izinto ezikhanyayo njl.

Ukuhanjiswa

Gallium oxide okanye Gallium Trioxide Ga₂O₃ kwifom ye-α okanye ye-β ye-crystallographic ngobunyulu be-99.99%, 99.999% kunye ne-99.9999% (4N 5N 6N) kwi-Western Minmetals (SC) Corporation inokuhanjiswa ngobukhulu bepowder D50 ≤ 4.0micron, -80mesh∼80micron） I-50-100 mesh (0.15-0.30micron) kwi-package ye-1kg, i-2kg kwibhotile ye-polyethylene, okanye i-1kg, i-2kg, i-5kg kwi-vacuum ye-aluminium composite bag kunye nebhokisi yebhokisi ngaphandle kwe-10kg okanye i-20kg net nganye, okanye njengeenkcukacha ezichanekileyo ezichanekileyo .

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Inkcazo yobuGcisa

Ga₂O₃

Imbonakalo	Ikristale emhlophe
Ubunzima beMolekyuli	187.44
Ukuxinana	-
Indawo yokunyibilika	1740 °C
Inombolo yeCAS.	12024-21-4

Hayi.	Into		Inkcazo esemgangathweni
1	UbunyuluGa₂O₃≥		Ukungcola(ICP-MS PPM Ubuninzi ngakunye)
2	4N	99.99%	Mg/Ni/Mn 3.0, Cr/Ca/Co/Cd/Cu/Sn 5.0, Pb 8.0, Na/Fe/Al 10	Iyonke ≤100
	5N	99.999%	Mg/Ni/Mn 0.1, Cr/ Ca/Cu/Cd/Cu/Sn 0.5, Na/Al/Fe 1.0, Pb 1.5	Iyonke ≤10
	6N	99.9999%	Mn/Ca/Co/Cd 0.05, Pb/Al/Fe/Cu/Sn 0.1	Iyonke ≤1.0
3	Ifom yeCrystallographic		u-α okanye u-β udidi
4	Ubungakanani		D₅₀≤ I-4um, -80 i-mesh okanye i-50-100 ye-mesh powder
5	Ukupakisha		1kg, 2kg kwibhotile yeplastiki, okanye 1kg, 2kg, 5kg kwi-aluminium composite bag kunye nebhokisi ibhokisi ngaphandle

Gallium oxide Ga₂O₃okanye Gallium Trioxide Ga₂O₃kwifom ye-α okanye ye-β ye-crystallographic ngobunyulu be-99.99%, 99.999% kunye ne-99.9999% (4N 5N 6N) kwi-Western Minmetals (SC) Corporation inokuhanjiswa ngobukhulu bepowder D50 ≤ 4.0micron, -80mesh∼80micron） I-50-100 mesh (0.15-0.30micron) kwi-package ye-1kg, i-2kg kwibhotile ye-polyethylene, okanye i-1kg, i-2kg, i-5kg kwi-vacuum ye-aluminium composite bag enebhokisi yebhokisi ngaphandle, okanye njengeenkcukacha ezilungiselelwe kwizisombululo ezigqibeleleyo.

Gallium oxide Ga₂O₃okanye i-Gallium Trioxide inethemba elibanzi lokusetyenziswa kwishishini le-optoelectronic njenge-insulating layer ye-Ga-based semiconductor materials, njenge-ultraviolet filters, njenge-chemical probes ye-oksijeni, umqobo wokukhusela ukudibanisa okuqinileyo, izixhobo ze-optic semiconductor kunye nezicelo ze-ceramic.I-Gallium oxide ikwasetyenziselwa ukukhanyisa ukukhanya kwee-diode ze-LED ze-fluorescent powder, i-reagent yokucoceka okuphezulu, kunye ne-laser kunye nezinye izinto ezikhanyayo njl.