FZ Silicon Wafer

Inkcazo

FZ Single Crystal Silicon Wafer,Indawo edadayo (FZ) Isilicon yisilicon esulungekileyo ngokugqithisileyo enoxinzelelo oluphantsi kakhulu lweoksijini kunye nokungcola kwekhabhoni etsalwa bubuchwephesha bokucoca indawo edadayo.Indawo edadayo ye-FZ yindlela enye yokukhulisa i-crystal ingot eyahlukileyo kwindlela ye-CZ apho ikristale yembewu incanyathiselwe phantsi kwe-polycrystalline silicon ingot, kunye nomda phakathi kwekristale yembewu kunye ne-polycrystalline crystal silicon inyibilikiswa yi-RF coil induction yokufudumeza ukwenzela ukukhazimlisa okukodwa.Ikhoyili yeRF kunye nendawo enyibilikisiweyo ihambela phezulu, kwaye ikristale enye iyaqina ngaphezulu kwekristale yembewu ngokufanelekileyo.I-silicon ye-Float-zone iqinisekiswa ngokusasazwa okufanayo kwe-dopant, ukuhluka okuphantsi kokumelana, ukunqanda izixa zokungcola, ixesha elide lokuthwala, ukujoliswe kuko okuphezulu kunye ne-silicon ecocekileyo.I-silicon ye-Float-zone yenye indlela yokucoceka okuphezulu kwiikristale ezikhuliswe yinkqubo yeCzochralski CZ.Ngeempawu zale ndlela, i-FZ Single Crystal Silicon ilungele ukusetyenziswa kwizixhobo zombane, ezifana ne-diodes, thyristors, IGBTs, MEMS, diode, i-RF device kunye ne-MOSFETs yamandla, okanye njenge-substrate ye-high-resolution particle okanye i-optical detectors. , izixhobo zamandla kunye neenzwa, iiseli zelanga ezisebenza kakuhle njl.njl.

Ukuhanjiswa

I-FZ Single Crystal Silicon Wafer N-uhlobo kunye ne-P-type conductivity kwi-Western Minmetals (SC) Corporation ingahanjiswa ngobukhulu be-2, 3, 4, 6 kunye ne-8 intshi (50mm, 75mm, 100mm, 125mm, 150mm kunye ne-200mm) kunye i-orientation <100>, <110>, <111> kunye nokugqitywa komphezulu we-As-cut, i-Lapped, ifakwe kwaye iphuculwe kwiphakheji yebhokisi yogwebu okanye ikhasethi enebhokisi yebhokisi ngaphandle.

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Inkcazo yobuGcisa

FZ Silicon Wafer

FZ Single Crystal Silicon Waferokanye i-FZ Mono-crystal Silicon Wafer ye-intrinsic, n-uhlobo kunye nohlobo lwe-p-type conductivity kwi-Western Minmetals (SC) Corporation inokunikezelwa ngobukhulu obahlukeneyo be-2, 3, 4, 6 kunye ne-8 intshi ububanzi (50mm, 75mm, 100mm , 125mm, 150mm kunye ne-200mm) kunye noluhlu olubanzi lobukhulu ukusuka kwi-279um ukuya kwi-2000um kwi- <100>, <110>, <111> ukuqhelaniswa nokugqitywa komphezulu we-as-cut, i-lapped, igxunyekwe kwaye ipolishiwe kwiphakheji yebhokisi yogwebu okanye ikhasethi. enebhokisi yebhokisi ngaphandle.

Hayi.	Izinto	Inkcazo esemgangathweni
1	Ubungakanani	2"	3"	4"	5"	6"
2	Ububanzi mm	50.8±0.3	76.2±0.3	100±0.5	125±0.5	150±0.5
3	Ukuqhuba	N/P	N/P	N/P	N/P	N/P
4	Ukuqhelaniswa	<100>, <110>, <111>
5	Ukutyeba μm	279, 381, 425, 525, 575, 625, 675, 725 okanye njengoko kufuneka
6	Ukuxhathisa Ω-cm	1-3, 3-5, 40-60, 800-1000, 1000-1400 okanye njengoko kufuneka
7	RRV ubuninzi	8%, 10%, 12%
8	TTV μm max	10	10	10	10	10
9	I-Bow/Warp μm max	30	30	30	30	30
10	Umphezulu Gqiba	Njengoko-cut, L/L, P/E, P/P
11	Ukupakisha	Ibhokisi yogwebu okanye ikhasethi ngaphakathi, ibhokisi yebhokisi ngaphandle.

Uphawu	Si
Inombolo yeAtom	14
Ubunzima beAtom	28.09
Udidi lweNqanaba	Metalloid
Iqela, Ixesha, Block	14, 3, P
Ubume beCrystal	Idayimani
Umbala	Ingwevu emnyama
Indawo yokunyibilika	1414°C, 1687.15 K
Indawo yokubilisa	3265°C, 3538.15 K
Ukuxinana kwi-300K	2.329 g/cm³
Ukuxhathisa kwangaphakathi	3.2E5 Ω-cm
Inombolo yeCAS	7440-21-3
Inombolo yeEC	231-130-8

FZ ISilicon yeCrystal enye, kunye neempawu eziphambili zendlela ye-Float-zone (FZ), ilungele ukusetyenziswa kulwakhiwo lwezixhobo zombane, ezifana ne-diode, i-thyristors, i-IGBTs, i-MEMS, i-diode, isixhobo se-RF kunye nee-MOSFET zamandla, okanye njenge-substrate ye-high-resolution. i-particle okanye i-optical detectors, izixhobo zamandla kunye ne-sensor, i-cell esebenza kakuhle yelanga njl.