I-Indium Phosphide InP

Inkcazo

I-Indium Phosphide InP,I-CAS No.22398-80-7, indawo yokunyibilika i-1600 ° C, i-semiconductor ye-binary compound ye-III-V yosapho, i-cubic "i-zinc blende" ye-crystal structure, efana neninzi ye-semiconductors ye-III-V, yenziwe ukusuka. I-6N 7N yococeko oluphezulu lwe-indium kunye ne-phosphorus element, kwaye ikhule ibe yikristale enye nge-LEC okanye ubuchule be-VGF.Ikristale ye-Indium Phosphide yenziwe ukuba ibeyi-n-type, i-p-type okanye i-semi-insulating conductivity ukwenzela ukwakhiwa kwe-wafer ukuya kuthi ga kwi-6" (150 mm) ububanzi, ebonisa i-gap yayo yebhendi ethe ngqo, ukuhamba okuphezulu okuphezulu kwee-electron kunye nemingxuma kunye ne-thermal esebenzayo. conductivity.I-Indium Phosphide InP Wafer prime okanye ibakala lovavanyo eWestern Minmetals (SC) Corporation inokubonelelwa ngohlobo lwe-p, uhlobo lwe-n kunye ne-semi-insulating conductivity kubungakanani be-2” 3” 4” kunye ne-6” (ukuya kuthi ga kwi-150mm) ububanzi, i-orientation <111> okanye <100> kunye nobukhulu be-350-625um kunye nokugqitywa komphezulu wenkqubo eqoshiwe kunye nepolishiwe okanye i-Epi-ready process.Ngeli xesha i-Indium Phosphide Single Crystal ingot 2-6″ iyafumaneka xa iceliwe.I-Polycrystalline Indium Phosphide InP okanye i-Multi-crystal InP ingot ngobukhulu be-D (60-75) x Ubude (180-400) mm ye-2.5-6.0kg kunye noxinzelelo lwe-carrier olungaphantsi kwe-6E15 okanye i-6E15-3E16 nayo iyafumaneka.Naziphi na iinkcukacha ezilungiselelweyo ezifumanekayo xa kucelwe ukufikelela kwisisombululo esigqibeleleyo.

Usetyenziso

I-Indium Phosphide InP wafer isetyenziselwa ngokubanzi ukuveliswa kwezixhobo ze-optoelectronic, izixhobo zombane eziphezulu kunye ne-high-frequency electronic, njenge-substrate ye-epitaxial indium-gallium-arsenide (InGaAs) esekelwe kwizixhobo ze-opto-electronic.I-Indium Phosphide ikwakwindlela yokwenziwa kwemithombo yokukhanya ethembisa ngokugqithisileyo kunxibelelwano lwefiber optical, izixhobo zomthombo wamandla we-microwave, ii-microwave amplifiers kunye nezixhobo zesango leFETs, iimodyuli ezinesantya esiphezulu kunye ne-photo-detectors, kunye nokuhamba ngesathelayithi njalo njalo.

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I-Indium Phosphide InP

I-Indium Phosphide Ikristale enyeI-Wafer (InP crystal ingot okanye i-Wafer) kwi-Western Minmetals (SC) Corporation inokunikezelwa ngohlobo lwe-p, uhlobo lwe-n kunye ne-semi-insulating conductivity ngobukhulu be-2" 3" 4" kunye ne-6" (ukuya kwi-150mm) ububanzi, i-orientation <111> okanye <100> kunye nobukhulu be-350-625um kunye nokugqitywa komphezulu wenkqubo eqoshiwe kunye nepolishiwe okanye i-Epi-ready process.

I-Indidium Phosfide Polycrystallineokanye i-Multi-Crystal ingot (i-InP i-poly ingot) ngobukhulu be-D (60-75) x L (180-400) mm ye-2.5-6.0kg kunye noxinzelelo lwe-carrier olungaphantsi kwe-6E15 okanye i-6E15-3E16 ikhoyo.Naziphi na iinkcukacha ezilungiselelweyo ezifumanekayo xa kucelwe ukufikelela kwisisombululo esigqibeleleyo.

Hayi.	Izinto	Inkcazo esemgangathweni
1	I-Indium Phosphide Ikristale enye	2"	3"	4"
2	Ububanzi mm	50.8±0.5	76.2±0.5	100±0.5
3	Indlela Yokukhula	VGF	VGF	VGF
4	Ukuqhuba	P/Zn-doped, N/(S-doped okanye un-doped), Semi-insulating
5	Ukuqhelaniswa	(100)±0.5°, (111)±0.5°
6	Ukutyeba μm	350±25	600±25	600±25
7	Ukuqhelaniswa neFlethi mm	16±2	22±1	32.5±1
8	Uchonga I-Flat mm	8±1	11±1	18±1
9	Ukuhamba cm2 / Vs	50-70, >2000, (1.5-4)E3
10	Ugxininiso lwe-Carrier cm-3	(0.6-6)E18, ≤3E16
11	TTV μm max	10	10	10
12	Zithobe μm max	10	10	10
13	Warp μm max	15	15	15
14	I-Dislocation Density cm-2 max	500	1000	2000
15	Umphezulu Gqiba	P/E, P/P	P/E, P/P	P/E, P/P
16	Ukupakisha	Isikhongozeli se-wafer esinye esitywinwe kwingxowa ye-aluminiyam ehlanganisiweyo.

Hayi.	Izinto	Inkcazo esemgangathweni
1	Indium Phosphide Ingot	I-Poly-Crystalline okanye i-Multi-Crystal Ingot
2	Ubungakanani beCrystal	D(60-75) x L(180-400)mm
3	Ubunzima ngeCrystal Ingot	2.5-6.0Kg
4	Ukushukuma	≥3500 cm²/VS
5	Ugxininiso lweCarrier	≤6E15, okanye 6E15-3E16 cm^-3
6	Ukupakisha	I-ingot ye-crystal ye-InP nganye ikwisikhwama seplastiki esitywiniweyo, ii-ingots ezi-2-3 kwibhokisi yebhokisi enye.

Ifomula yomgca	InP
Ubunzima beMolekyuli	145.79
Ubume beCrystal	Umxube weZinc
Imbonakalo	Umgca weCrystal
Indawo yokunyibilika	1062°C
Indawo yokubilisa	N / A
Ukuxinana kwi-300K	4.81 g/cm³
Umsantsa wamandla	1.344 eV
Ukuxhathisa kwangaphakathi	8.6E7 Ω-cm
Inombolo yeCAS	22398-80-7
Inombolo yeEC	244-959-5

I-Indidium Phosphide InP Waferisetyenziselwa ngokubanzi ukuveliswa kwezixhobo ze-optoelectronic, izixhobo zombane eziphezulu kunye ne-high-frequency electronic, njenge-substrate ye-epitaxial indium-gallium-arsenide (InGaAs) esekelwe kwizixhobo ze-opto-electronic.I-Indium Phosphide ikwakwindlela yokwenziwa kwemithombo yokukhanya ethembisa ngokugqithisileyo kunxibelelwano lwefiber optical, izixhobo zomthombo wamandla we-microwave, ii-microwave amplifiers kunye nezixhobo zesango leFETs, iimodyuli ezinesantya esiphezulu kunye ne-photo-detectors, kunye nokuhamba ngesathelayithi njalo njalo.