Silicon Carbide SiC

Inkcazo

ISilicon Carbide Wafer SiC, inzima kakhulu, imveliso eyenziwe ngekristale ikhompawundi yesilicon kunye nekhabhoni ngendlela ye-MOCVD, kunye nemibonisoUmsantsa okhethekileyo webhendi ebanzi kunye nezinye iimpawu ezithandekayo zokwandiswa kwe-thermal ephantsi, ubushushu obuphezulu bokusebenza, ukuchithwa kobushushu obulungileyo, ukutshintshela okusezantsi kunye nelahleko yokuqhuba, ukonga amandla ngakumbi, ukuhanjiswa kwe-thermal ephezulu kunye namandla okuqhekeka kwentsimi yombane, kunye nemisinga egxile ngakumbi. imeko.ISilicon Carbide SiC eWestern Minmetals (SC) Corporation inokubonelelwa ngobungakanani be-2″ 3' 4“ kunye ne-6″ (50mm, 75mm, 100mm, 150mm) ububanzi, kunye nohlobo lwe-n, i-semi-insulating okanye i-dummy wafer kwimizi-mveliso. kunye nesicelo selabhoratri.Nayiphi na inkcazo elungiselelweyo yesisombululo esigqibeleleyo kubathengi bethu kwihlabathi jikelele.

Usetyenziso

Umgangatho ophezulu we-4H/6H weSilicon Carbide SiC wafer ulungele ukwenziwa kwezinto ezininzi ezikhawulezayo, ubushushu obuphezulu kunye nezixhobo zombane eziphezulu ezifana ne-Schottky diodes & SBD, ii-MOSFETs zokutshintsha amandla aphezulu kunye nee-JFETs, njl. kwakhona imathiriyeli enqwenelekayo kuphando kunye nophuhliso lwe-insulated-gate bipolar transistors kunye ne-thyristors.Njengesixhobo esitsha se-semiconducting esitsha esibalaseleyo, iSilicon Carbide SiC wafer ikwasebenza njengesisasazo sobushushu esisebenzayo kumacandelo anamandla e-LED, okanye njengesiseko esizinzileyo nesithandwayo sokukhulisa umaleko we-GaN ukuxhasa ukuphononongwa kwenzululwazi okujoliswe kuko kwixesha elizayo.

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Inkcazo yobuGcisa

Silicon Carbide SiC

Silicon Carbide SiCeWestern Minmetals (SC) Corporation inokubonelelwa ngobungakanani be-2″ 3' 4“ kunye ne-6″ (50mm, 75mm, 100mm, 150mm) ububanzi, nohlobo lwe-n, i-semi-insulating okanye i-dummy wafer yokusetyenziswa kwemizi-mveliso kunye nelabhoratri. .Nayiphi na inkcazo elungiselelweyo yisisombululo esipheleleyo kubathengi bethu kwihlabathi jikelele.

Ifomula yomgca	SiC
Ubunzima beMolekyuli	40.1
Ubume beCrystal	Wurtzite
Imbonakalo	Iqinile
Indawo yokunyibilika	3103±40K
Indawo yokubilisa	N / A
Ukuxinana kwi-300K	3.21 g/cm³
Umsantsa wamandla	(3.00-3.23) eV
Ukuxhathisa kwangaphakathi	>1E5 Ω-cm
Inombolo yeCAS	409-21-2
Inombolo yeEC	206-991-8

Hayi.	Izinto	Inkcazo esemgangathweni
1	SiC ubukhulu	2"	3"	4"	6"
2	Ububanzi mm	50.8 0.38	76.2 0.38	100 0.5	150 0.5
3	Indlela Yokukhula	MOCVD	MOCVD	MOCVD	MOCVD
4	Uhlobo lokuqhuba	4H-N, 6H-N, 4H-SI, 6H-SI
5	Ukuxhathisa Ω-cm	0.015-0.028;0.02-0.1;>1E5
6	Ukuqhelaniswa	0 ° ± 0.5 °;4.0 ° ukuya <1120>
7	Ukutyeba μm	330±25	330±25	(350-500) ±25	(350-500) ±25
8	Indawo yeFlethi ePhambili	<1-100>±5°	<1-100>±5°	<1-100>±5°	<1-100>±5°
9	Ubude obuPhambili beFlethi mm	16±1.7	22.2±3.2	32.5±2	47.5±2.5
10	Indawo yeFlethi yesibini	I-silicon ijonge phezulu: i-90 °, i-clockwise ukusuka kwi-prime flat ± 5.0 °
11	Ubude beFlethi yesibini mm	8±1.7	11.2±1.5	18±2	22±2.5
12	TTV μm max	15	15	15	15
13	Zithobe μm max	40	40	40	40
14	Warp μm max	60	60	60	60
15	Ukukhutshwa komda mm max	1	2	3	3
16	Uxinaniso lweMibhobho cm-2	<5, ishishini;<15, ilebhu;<50, dummy
17	Ukususwa kwe-cm-2	<3000, ishishini;<20000, ilebhu;<500000, dummy
18	Uburhabaxa boMphezulu nm max	1(Ilungisiwe), 0.5 (CMP)
19	Iintanda	Akukho nanye, kwibakala lamashishini
20	Amacwecwe aneHexagonal	Akukho nanye, kwibakala lamashishini
21	Imikrwelo	≤3mm, ubude bubonke bungaphantsi kobubanzi be-substrate
22	IiChips zoMda	Akukho nanye, kwibakala lamashishini
23	Ukupakisha	Isikhongozeli se-wafer esinye esitywinwe kwingxowa ye-aluminiyam ehlanganisiweyo.

I-Silicon Carbide SiC 4H / 6HI-wafer ekumgangatho ophezulu ilungele ukwenziwa kwezinto ezininzi ezikhawulezayo, ubushushu obuphezulu & ne-voltage ephezulu yezixhobo zombane ezifana ne-Schottky diodes & SBD, ii-MOSFETs zokutshintsha amandla aphezulu kunye nee-JFETs, njl. njl. Ikwayinto enqwenelekayo uphando kunye nophuhliso lwe-bipolar transistors kunye ne-thyristors.Njengesixhobo esitsha se-semiconducting esitsha esibalaseleyo, iSilicon Carbide SiC wafer ikwasebenza njengesisasazo sobushushu esisebenzayo kumacandelo anamandla e-LED, okanye njengesiseko esizinzileyo nesithandwayo sokukhulisa umaleko we-GaN ukuxhasa ukuphononongwa kwenzululwazi okujoliswe kuko kwixesha elizayo.