Inkcazo
ISapphire eSingle Crystal Wafer & Ingotor IAluminiyam oxide Al2O3I-99.999% min, eyaziwa ngokuba ngamatye amhlophe, i-anisotropic hexagonal structure, yinto egqwesileyo ye-multi-purpose material eneendawo ezizodwa ezibonakalayo, iipropathi ezibonakalayo kunye neempawu zekhemikhali, ezinobunzima obuphezulu bomphezulu, i-thermal conductivity ephezulu, ukuguquguquka okuphezulu kwe-dielectric, ukucaca okugqwesileyo kunye nokulungileyo. ukuzinza kweekhemikhali kunye nokumelana nee-acids eziqhelekileyo zeekhemikhali kunye ne-alkali.Isafire Ikristale enye okanye iAluminiyam oxide enye crystal Al2O3I-99.999% yococeko kwi-Western Minmetals (SC) Corporation inokuhanjiswa kubungakanani bedayamitha ye-2″, 4″ kunye ne-6″ (50mm, 100mm, 150mm) isiqwenga esisicaba kunye ne-ingot, enomphezulu ogqityiweyo ogqityiweyo ogqityiweyo, opolishiweyo okanye olungele i-epi.Nakuphi na ukucaciswa okulungiselelweyo kunye nobukhulu sisisombululo esifanelekileyo kubathengi bethu kwihlabathi liphela.
Usetyenziso
Ngenxa yamandla ayo okwakheka kwekristale yesibini eqinileyo ecaleni kwedayimani, ikristale yeSapphire isetyenziswa kakhulu ekwenzeni icrystal substrate enye, imathiriyeli yefilimu eyisuperconducting, iblue, purple and white light etting diode diode iiLEDs, iwindow enobushushu obuphezulu, kunye nefestile. blue laser LD Industrial substrate ekhethwayo.I-Crystal yeSapphire enye okanye i-aluminium oxide ye-crystal eyodwa i-Al2O3 iluncedo kuluhlu lothumelo ukusuka kwi-0.2-5.5 μm kunye nakwamanye amashishini aqhubela phambili okuvelisa i-semiconductors yamandla.
Inkcazo yobuGcisa
Ikristale yeSapphire, inamandla okwakhiwa kwekristale yesibini enzima ecaleni kwedayimani, isetyenziswa kakhulu ekwenziweni kwe-crystal substrate enye, i-superconducting film substrate material, iblue, purple and white light emit diodes diodes LEDs, iwindow enobushushu obuphezulu, kunye neblue laser. I-LD Industrial substrate ekhethwayo.I-Crystal yeSapphire enye okanye i-aluminium oxide ye-crystal eyodwa i-Al2O3 iluncedo kuluhlu lothumelo ukusuka kwi-0.2-5.5 μm kunye nakwamanye amashishini aqhubela phambili okuvelisa i-semiconductors yamandla.
Hayi. | Izinto | Inkcazo esemgangathweni | ||
1 | Ububanzi mm | 50.8±0.05 | 100±0.1 | 150±0.2 |
2 | Indlela Yokukhula | I-HEM | I-HEM | I-HEM |
3 | Ukuqhelaniswa | (CA) okanye (CM) | (CA) okanye (CM) | (CA) okanye (CM) |
4 | Indawo yeFlethi ePhambili | I-axis ±0.2° | I-axis ±0.2° | I-axis ±0.2° |
5 | Ubude obuPhambili beFlethi mm | 16±0.5 | 30±0.5 | 47.5±0.5 |
6 | Ukutyeba μm | 430±10 | 650±20 | 1300±20 |
7 | TTV μm max | 5 | 10 | 15 |
8 | Zithobe μm max | 5 | 10 | 15 |
9 | Warp μm max | 8 | 15 | 30 |
10 | Umphezulu Gqiba | P/E | P/E | P/E |
11 | Uburhabaxa boMphezulu nm | <0.2 (i-epi-ready, kumphezulu ogudisiweyo) | ||
12 | Ukupakisha | Kwingxowa yokufunxa ezaliswe ngumoya wenitrogen | ||
13 | Amagqabantshintshi | Ingot kunye nesambuku ukuya kuthi ga kwi-8" iyafumaneka xa uceliwe. |
Ifomula yomgca | Al2O3 |
Ubunzima beMolekyuli | 101.96 |
Ubume beCrystal | Hexagonal |
Imbonakalo | Ukuguquguquka okuqinileyo |
Indawo yokunyibilika | 2050 °C, 3720 °F |
Indawo yokubilisa | 2977 °C, 5391 °F |
Ukuxinana kwi-300K | 4.0 g/cm3 |
Umsantsa wamandla | N / A |
Ukuxhathisa kwangaphakathi | 1E16 Ω-cm |
Inombolo yeCAS | 1344-28-1 |
Inombolo yeEC | N / A |
Ikristale enye yeSapphireokanyeI-Aluminiyam oxideikristale enye Al2O3I-99.999% yococeko kwi-Western Minmetals (SC) Corporation inokuhanjiswa kubungakanani bedayamitha ye-2″, 4″ kunye ne-6″ (50mm, 100mm, 150mm) isiqwenga esisicaba kunye ne-ingot, enomphezulu ogqityiweyo ogqityiweyo ogqityiweyo, opolishiweyo okanye olungele i-epi.Nakuphi na ukucaciswa okulungiselelweyo kunye nobukhulu sisisombululo esifanelekileyo kubathengi bethu kwihlabathi liphela.
Iingcebiso zokuthengwa kwempahla
Ikristale yeSapphire yeAluminiyam iOxide Crystal