I-Indium Arsenide InAs

Inkcazo

I-Indium arsenide InAs crystal yi-semiconductor edibeneyo yeqela le-III-V ehlanganiswe ubuncinane yi-6N 7N ecocekileyo ye-Indium kunye ne-Arsenic element kunye ne-crystal eyodwa ekhulile nge-VGF okanye inkqubo ye-Liquid Encapsulated Czochralski ( LEC ), imbonakalo yombala ongwevu, i-cubic crystals ene-zinc-blende structure. , indawo yokunyibilika ye-942 °C.I-Indium arsenide band gap yinguqu ethe ngqo efana ne-gallium arsenide, kwaye ububanzi bebhendi obunqatshelwe yi-0.45eV (300K).I-InAs crystal inokufana okuphezulu kweeparamitha zombane, i-lattice engaguqukiyo, ukuhamba kwe-electron ephezulu kunye noxinzelelo oluphantsi.I-Cylindrical InAs crystal ekhuliswe yi-VGF okanye i-LEC inokunqunyulwa kwaye yenziwe ibe yi-wafer as-cut, etched, ipolish okanye i-epi-ready for MBE okanye i-MOCVD epitaxial ukukhula.

Usetyenziso

I-Indium arsenide crystal wafer sisixhobo esihle kakhulu sokwenza izixhobo zeHolo kunye nesivamvo semagnethi eshukumayo kodwa i-bandgap yamandla emxinwa, eyona nto ifanelekileyo kulwakhiwo lwezixhobo zokubona infrared ezinoluhlu lwamaza oluyi-1–3.8 µm olusetyenziswa kusetyenziso lwamandla aphezulu. kwiqondo lobushushu begumbi, kunye ne-mid-wavelength infrared super lattice lasers, i-mid-infrared LEDs izixhobo ezenziweyo kuluhlu lwe-2-14 μm yobude bobude.Ngaphaya koko, i-InAs yeyona ndawo ilungileyo yokuxhasa ngakumbi i-InGaAs, i-InAsSb, i-InAsPSb kunye ne-InNAsSb okanye i-AlGaSb super lattice structure njl.njl.

Buza ngoku

Iinkcukacha

Iithegi

Inkcazo yobuGcisa

Indium Arsenide

KwiAs

Indium Arsenide Crystal WaferI-substrate enkulu yokwenza izixhobo zeHolo kunye ne-magnetic field sensor yokuhamba kweholo ephezulu kodwa i-bandgap yamandla emxinwa, into efanelekileyo yokwakhiwa kwee-detectors ze-infrared ezinoluhlu lwe-wavelength ye-1-3.8 µm esetyenziswa kusetyenziso lwamandla aphezulu kwiqondo lobushushu begumbi, kunye ne-mid-wavelength infrared super lattice lasers, i-mid-infrared LEDs izixhobo ezenziweyo kuluhlu lwe-2-14 μm yamaza.Ngaphaya koko, i-InAs yeyona ndawo ifanelekileyo yokuxhasa ngakumbi i-InGaAs, i-InAsSb, i-InAsPSb kunye ne-InNAsSb okanye i-AlGaSb super lattice structure njl.

Hayi.	Izinto	Inkcazo esemgangathweni
1	Ubungakanani	2"	3"	4"
2	Ububanzi mm	50.5±0.5	76.2±0.5	100±0.5
3	Indlela Yokukhula	I-LEC	I-LEC	I-LEC
4	Ukuqhuba	P-udidi/Zn-doped, N-uhlobo/S-doped, Un-doped
5	Ukuqhelaniswa	(100)±0.5°, (111)±0.5°
6	Ukutyeba μm	500±25	600±25	800±25
7	Ukuqhelaniswa neFlethi mm	16±2	22±2	32±2
8	Uchonga I-Flat mm	8±1	11±1	18±1
9	Ukuhamba cm2 / Vs	60-300, ≥2000 okanye njengoko kufuneka
10	Ugxininiso lwe-Carrier cm-3	(3-80)E17 okanye ≤5E16
11	TTV μm max	10	10	10
12	Zithobe μm max	10	10	10
13	Warp μm max	15	15	15
14	I-Dislocation Density cm-2 max	1000	2000	5000
15	Umphezulu Gqiba	P/E, P/P	P/E, P/P	P/E, P/P
16	Ukupakisha	Isikhongozeli se-wafer esinye esitywinwe kwingxowa yeAluminiyam.

Ifomula yomgca	KwiAs
Ubunzima beMolekyuli	189.74
Ubume beCrystal	Umxube weZinc
Imbonakalo	Ikristale engwevu eqinileyo
Indawo yokunyibilika	(936-942)°C
Indawo yokubilisa	N / A
Ukuxinana kwi-300K	5.67 g/cm³
Umsantsa wamandla	0.354 eV
Ukuxhathisa kwangaphakathi	0.16 Ω-cm
Inombolo yeCAS	1303-11-3
Inombolo yeEC	215-115-3

I-Indium Arsenide InAseWestern Minmetals (SC) Corporation inokubonelelwa njengentlama yepolycrystalline okanye ikristale enye njengokusikwa, ukuxhonywa, ukupolishwa, okanye ii-epi-ready wafers kubungakanani be-2” 3” kunye ne-4” (50mm, 75mm,100mm) ububanzi, kunye p-uhlobo, u-n-uhlobo okanye un-doped conductivity kunye <111> okanye <100> orientation.Ukucaciswa okulungiselelweyo sisisombululo esigqibeleleyo kubathengi bethu kwihlabathi liphela.