Inkcazo
Indium Antimonide InSb, i-semiconductor yeqela le-III-V i-crystalline compounds kunye ne-zinc-blende lattice structure, idityaniswe yi-6N 7N i-Indium ephezulu ecocekileyo kunye nezinto ze-antimony, kwaye ikhule i-crystal eyodwa nge-VGF okanye indlela ye-Liquid Encapsulated Czochralski LEC ukusuka kwi-multiple zone ecocekileyo ye-polycrystalline ingot, enokunqunyulwa kwaye yenziwe ibe yi-wafer kunye nebhlokhi emva koko.I-InSb yi-semiconductor yenguqu ethe ngqo ene-gap ye-band ye-0.17eV kwiqondo lokushisa, uvakalelo oluphezulu kwi-1-5μm ubude be-wavelength kunye ne-ultra high hall.I-Indium Antimonide InSb n-uhlobo, uhlobo lwe-p kunye ne-semi-insulating conductivity kwi-Western Minmetals (SC) Corporation inokubonelelwa ngobungakanani be-1″ 2″ 3″ kunye ne-4” (30mm, 50mm, 75mm, 100mm) ububanzi, ukuziqhelanisa < 111> okanye <100>, kunye nokugqitywa komphezulu we-wafer of as-cut, ephothiweyo, exhonyiweyo kwaye epolishiwe.I-Indium Antimonide InSb ekujoliswe kuyo ye-Dia.50-80mm ene-n-doped un-type nayo iyafumaneka.Okwangoku, i-polycrystalline indium antimonide InSb (i-multicrystal InSb) kunye nobukhulu be-lump engaqhelekanga, okanye i-blank (15-40) x (40-80) mm, kunye ne-bar ejikelezayo ye-D30-80mm nazo zenziwe ngokwezifiso ngesicelo kwisisombululo esipheleleyo.
Isicelo
I-Indium Antimonide InSb yenye i-substrate efanelekileyo yokuvelisa amacandelo amaninzi aseburhulumenteni kunye nezixhobo, ezifana nesisombululo se-imaging ye-thermal, inkqubo ye-FLIR, i-holo element kunye ne-magnetoresistance effect element, inkqubo ye-infrared homing guide guide, i-infrared photodetector sensor ephendula kakhulu. , isivamvo sokuchaneka okuphezulu kozibuthe kunye ne-rotary resistivity, i-focal planar arrays, kunye nokulungelelaniswa njengomthombo wemitha ye-terahertz kunye ne-infrared astronomical space telescope njl.njl.
Inkcazo yobuGcisa
I-Indium Antimonide Substrate(I-InSb Substrate, iWafer ye-InSb) uhlobo lwe-n okanye i-p-type eWestern Minmetals (SC) Corporation inokubonelelwa ngobukhulu be-1" 2" 3" kunye ne-4" (30, 50, 75 kunye ne-100mm) ububanzi, i-orientation <111> okanye <100>, kunye kunye nomphezulu we-wafer ojikelezileyo, ogxininisiweyo, opholisiweyo.
I-Indium AntimonidePi-olycrystalline (i-InSb Polycrystalline, okanye i-multicrystal InSb) enobungakanani bentlama engaqhelekanga, okanye engenanto (15-40) x(40-80) mm nazo zenziwe ngokwesicelo kwisisombululo esigqibeleleyo.
Okwangoku, i-Indium Antimonide Target (i-InSb Target) ye-Dia.50-80mm ene-n-doped n-type iyafumaneka.
Hayi. | Izinto | Inkcazo esemgangathweni | ||
1 | I-Indium Antimonide Substrate | 2" | 3" | 4" |
2 | Ububanzi mm | 50.5±0.5 | 76.2±0.5 | 100±0.5 |
3 | Indlela Yokukhula | I-LEC | I-LEC | I-LEC |
4 | Ukuqhuba | P-udidi/Zn,Ge doped, N-udidi/Te-doped, Un-doped | ||
5 | Ukuqhelaniswa | (100)±0.5°, (111)±0.5° | ||
6 | Ukutyeba μm | 500±25 | 600±25 | 800±25 |
7 | Ukuqhelaniswa neFlethi mm | 16±2 | 22±1 | 32.5±1 |
8 | Uchonga I-Flat mm | 8±1 | 11±1 | 18±1 |
9 | Ukuhamba cm2 / Vs | 1-7E5 N/un-doped, 3E5-2E4 N/Te-doped, 8-0.6E3 okanye ≤8E13 P/Ge-doped | ||
10 | Ugxininiso lwe-Carrier cm-3 | 6E13-3E14 N/un-doped, 3E14-2E18 N/Te-doped, 1E14-9E17 okanye <1E14 P/Ge-doped | ||
11 | TTV μm max | 15 | 15 | 15 |
12 | Zithobe μm max | 15 | 15 | 15 |
13 | Warp μm max | 20 | 20 | 20 |
14 | I-Dislocation Density cm-2 max | 50 | 50 | 50 |
15 | Umphezulu Gqiba | P/E, P/P | P/E, P/P | P/E, P/P |
16 | Ukupakisha | Isikhongozeli se-wafer esinye esitywinwe kwingxowa yeAluminiyam. |
Hayi. | Izinto | Inkcazo esemgangathweni | |
Indium Antimonide Polycrystalline | Ithagethi ye-Indium Antimonide | ||
1 | Ukuqhuba | Ingaguqulwanga | Ingaguqulwanga |
2 | Ugxininiso lomthwali cm-3 | 6E13-3E14 | 1.9-2.1E16 |
3 | Ukuhamba cm2/Vs | 5-7E5 | 6.9-7.9E4 |
4 | Ubungakanani | 15-40x40-80 mm | D(50-80) mm |
5 | Ukupakisha | Kwingxowa ye-aluminiyam edibeneyo, ibhokisi yebhokisi ngaphandle |
Ifomula yomgca | I-InSb |
Ubunzima beMolekyuli | 236.58 |
Ubume beCrystal | Umxube weZinc |
Imbonakalo | Iikristale zentsimbi ezingwevu emnyama |
Indawo yokunyibilika | 527 °C |
Indawo yokubilisa | N / A |
Ukuxinana kwi-300K | 5.78 g/cm3 |
Umsantsa wamandla | 0.17 eV |
Ukuxhathisa kwangaphakathi | 4E(-3) Ω-cm |
Inombolo yeCAS | 1312-41-0 |
Inombolo yeEC | 215-192-3 |
I-Indium Antimonide InSbI-wafer yeyona ndawo ifanelekileyo yokuvelisa amacandelo amaninzi akumgangatho wezobugcisa kunye nezixhobo, njengesisombululo se-imaging se-thermal esiphezulu, inkqubo ye-FLIR, iholo yeholo kunye ne-magnetoresistance effect element, inkqubo yesikhokelo somjukujelwa we-infrared homing, isivamvo se-infrared photodetector esiphendula kakhulu, siphezulu. -Inzwa echanekileyo yemagnethi kunye ne-rotary resistivity sensor, i-focal planar arrays, kwaye ihlengahlengiswe njengomthombo wemitha ye-terahertz kunye ne-infrared astronomical space telescope njl.njl.
Iingcebiso zokuthengwa kwempahla
I-Indium Antimonide InSb