IGallium Nitride GaN

Inkcazo

IGallium Nitride GaN, I-CAS 25617-97-4, i-molecular mass 83.73, i-wurtzite crystal structure, i-binary compound ye-band-gap semiconductor yeqela le-III-V elikhuliswe ngendlela ephuhliswe kakhulu yenkqubo ye-ammonothermal.Ebonakala ngomgangatho ogqibeleleyo wekristale, ukuhanjiswa kwe-thermal ephezulu, ukuhamba kwe-electron ephezulu, intsimi yombane ebaluleke kakhulu kunye ne-bandgap ebanzi, i-Gallium Nitride GaN ineempawu ezinqwenelekayo kwi-optoelectronics kunye nezicelo zokuva.

Usetyenziso

I-Gallium Nitride GaN ilungele ukuveliswa kwesantya esiphezulu sokusika kunye nomthamo ophezulu okhanyayo okhupha izibane ze-LEDs, izixhobo ze-laser kunye ne-optoelectronics ezifana ne-laser eluhlaza kunye neblue, iimveliso ze-electron mobility transistors (HEMTs) kunye namandla aphezulu. kunye neshishini lokuvelisa izixhobo ezinobushushu obuphezulu.

Ukuhanjiswa

Gallium Nitride GaN at Western Minmetals (SC) Corporation ingabonelelwa ngokobungakanani bafer setyhula 2 intshi ” okanye 4 ” (50mm, 100mm) kunye wafer square 10×10 okanye 10×5 mm.Nabuphi na ubungakanani obulungiselelweyo kunye neenkcukacha zezesisombululo esigqibeleleyo kubathengi bethu kwihlabathi liphela.

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Inkcazo yobuGcisa

IGallium Nitride GaN

IGallium Nitride GaNe Western Minmetals (SC) Corporation inganikwa kubungakanani setyhula wafer 2 intshi ” okanye 4 ” (50mm, 100mm) kunye wafer square 10×10 okanye 10×5 mm.Nabuphi na ubungakanani obulungiselelweyo kunye neenkcukacha zezesisombululo esigqibeleleyo kubathengi bethu kwihlabathi liphela.

Hayi.	Izinto	Inkcazo esemgangathweni
1	Ubume	Isetyhula	Isetyhula	Isikwere
2	Ubungakanani	2"	4"	--
3	Ububanzi mm	50.8±0.5	100±0.5	--
4	Ubude becala mm	--	--	10x10 okanye 10x5
5	Indlela Yokukhula	HVPE	HVPE	HVPE
6	Ukuqhelaniswa	Inqwelomoya (0001)	Inqwelomoya (0001)	Inqwelomoya (0001)
7	Uhlobo lokuqhuba	Uhlobo lwe-N/I-Si-doped, i-Un-doped, i-Semi-insulating
8	Ukuxhathisa Ω-cm	<0.1, <0.05, >1E6
9	Ukutyeba μm	350±25	350±25	350±25
10	TTV μm max	15	15	15
11	Zithobe μm max	20	20	20
12	EPD cm-2	<5E8	<5E8	<5E8
13	Umphezulu Gqiba	P/E, P/P	P/E, P/P	P/E, P/P
14	Uburhabaxa boMphezulu	Ngaphambili: ≤0.2nm, Emva: 0.5-1.5μm okanye ≤0.2nm
15	Ukupakisha	Isikhongozeli se-wafer esinye esitywinwe kwingxowa yeAluminiyam.

Ifomula yomgca	GaN
Ubunzima beMolekyuli	83.73
Ubume beCrystal	Zinc blende/Wurzite
Imbonakalo	Ukuguquguquka okuqinileyo
Indawo yokunyibilika	2500 °C
Indawo yokubilisa	N / A
Ukuxinana kwi-300K	6.15 g/cm³
Umsantsa wamandla	(3.2-3.29) eV kwi-300K
Ukuxhathisa kwangaphakathi	>1E8 Ω-cm
Inombolo yeCAS	25617-97-4
Inombolo yeEC	247-129-0

IGallium Nitride GaNilungele ukuveliswa kwesantya esiphezulu kunye nomthamo ophezulu okhanyayo okhupha ukukhanya kwe-LEDs, izixhobo ze-laser kunye ne-optoelectronics ezifana ne-laser eluhlaza kunye neblue, iimveliso ze-electron mobility transistors (HEMTs) kunye namandla aphezulu kunye ne-high-. Ishishini lokuvelisa izixhobo zobushushu.