Inkcazo
FZ-NTD Silicon Wafer, eyaziwa ngokuba yiFloat-Zone Neutron Transmutation Doped Silicon Wafer.I-oxygen-free, ukucoceka okuphezulu kunye ne-silicon ephezulu yokuxhathisa inokufumaneka by Ukukhula kwekristale kwindawo yeFZ (Zone-Floating), High resistivity FZ silicon crystal isoloko doped yi Neutron Transmutation Doping (NTD) inkqubo, apho neutron irradiation kwi undoped zone yesilicon edadayo ukwenza isotopu yesilicon evaleleke ngeeneutron kwaye ke ukubola kwi dopants ezifunwayo ukuphumeza injongo doping.Ngokuhlengahlengisa inqanaba lemitha ye-neutron, ukuxhathisa kunokutshintshwa ngaphandle kokwazisa i-dopants yangaphandle kwaye ke iqinisekisa ukucoceka kwezinto.Iziqwenga ze-silicon ze-FZ NTD (i-Float Zone Neutron Transmutation Doping Silicon) zineepropathi zeprayimari zobugcisa zoxinaniso lwe-doping olufanayo kunye nokusabalalisa okufanayo kwe-radial resistivity, awona manqanaba asezantsi okungcola,kunye nobomi abambalwa abaphetheyo.
Ukuhanjiswa
Njengomthengisi okhokelayo kwintengiso ye-NTD yesilicon yezicelo zamandla ezithembisayo, kunye nokulandela iimfuno ezikhulayo zomgangatho ophakamileyo wewafers, iFZ NTD silicon wafer ephezulu.eWestern Minmetals (SC) Corporation inokunikezelwa kubathengi bethu kwihlabathi liphela ngobukhulu obahlukeneyo ukusuka kwi-2 ″, 3 ″, 4 ″, 5″ kunye ne-6″ ububanzi (50mm, 75mm, 100mm, 125mm kunye ne-150mm) kunye noluhlu olubanzi lokuxhathisa. 5 ukuya ku-2000 ohm.cm kwi- <1-1-1>, <1-1-0>, <1-0-0> uqhelaniso kunye ne-a-cut, i-lapped, igxunyekwe kunye negqityiweyo indawo epholileyo kwiphakheji yebhokisi yogwebu okanye ikhasethi. , okanye njengengcaciso elungiselelweyo kwisisombululo esigqibeleleyo.
Inkcazo yobuGcisa
Njengomthengisi ohamba phambili kwimakethi ye-silicon ye-FZ NTD yezicelo zamandla ezithembisayo, kunye nokulandela iimfuno ezikhulayo zomgangatho ophezulu weewafers, i-FZ NTD silicon wafer ephezulu eWestern Minmetals (SC) Corporation inokunikezelwa kubathengi bethu kwihlabathi liphela ngobukhulu obahlukeneyo ukusuka kwi-2. ″ ukuya kwi-6″ ububanzi (50, 75, 100, 125 kunye ne-150mm) kunye noluhlu olubanzi lwe-resistantivity 5 ukuya ku-2000 ohm-cm kwi- <1-1-1>, <1-1-0>, <1-0- 0> uqhelaniso olunomphezulu ojikeleziweyo, ogxunyekiweyo kunye nopholisiweyo ogqityiweyo kwibhokisi yebhokisi yogwebu okanye ikhasethi, ibhokisi yebhokisi ngaphandle okanye njengoko kuchaziwe kwisisombululo esigqibeleleyo.
Hayi. | Izinto | Inkcazo esemgangathweni | ||||
1 | Ubungakanani | 2" | 3" | 4" | 5" | 6" |
2 | Ububanzi | 50.8±0.3 | 76.2±0.3 | 100±0.5 | 125±0.5 | 150±0.5 |
3 | Ukuqhuba | n-uhlobo | n-uhlobo | n-uhlobo | n-uhlobo | n-uhlobo |
4 | Ukuqhelaniswa | <100>, <111>, <110> | ||||
5 | Ukutyeba μm | 279, 381, 425, 525, 575, 625, 675, 725 okanye njengoko kufuneka | ||||
6 | Ukuxhathisa Ω-cm | 36-44, 44-52, 90-110, 100-250, 200-400 okanye njengoko kufuneka | ||||
7 | RRV ubuninzi | 8%, 10%, 12% | ||||
8 | TTV μm max | 10 | 10 | 10 | 10 | 10 |
9 | I-Bow/Warp μm max | 30 | 30 | 30 | 30 | 30 |
10 | Umthwali woBomi bonke μs | > 200, > 300, > 400 okanye njengoko kufuneka | ||||
11 | Umphezulu Gqiba | As-cut, Lapped, polished | ||||
12 | Ukupakisha | Ibhokisi yogwebu ngaphakathi, ibhokisi yebhokisi ngaphandle. |
IParameter yezinto ezisisiseko
Uphawu | Si |
Inombolo yeAtom | 14 |
Ubunzima beAtom | 28.09 |
Udidi lweNqanaba | Metalloid |
Iqela, Ixesha, Block | 14, 3, P |
Ubume beCrystal | Idayimani |
Umbala | Ingwevu emnyama |
Indawo yokunyibilika | 1414°C, 1687.15 K |
Indawo yokubilisa | 3265°C, 3538.15 K |
Ukuxinana kwi-300K | 2.329 g/cm3 |
Ukuxhathisa kwangaphakathi | 3.2E5 Ω-cm |
Inombolo yeCAS | 7440-21-3 |
Inombolo yeEC | 231-130-8 |
FZ-NTD Silicon Waferkubaluleke kakhulu kwizicelo ezinamandla aphezulu, ubugcisa be-detector kunye nezixhobo ze-semiconductor ekufuneka zisebenze kwiimeko ezinzima okanye apho ukuhluka okuphantsi kokumelana ne-wafer kuyadingeka, njengesango lokuvala i-thyristor GTO, i-static induction thyristor SITH, isigebenga. transistor GTR, insulate-sango bipolar transistor IGBT, eyongezelelweyo HV diode PIN.I-FZ NTD n-uhlobo lwe-silicon wafer lukwayinto ephambili yokusebenza kwiinguqu ezahlukeneyo, izilungisi, izinto zokulawula amandla amakhulu, izixhobo ze-elektroniki zamandla amatsha, izixhobo ze-photoelectronic, i-silicon rectifier SR, i-silicon yokulawula i-SCR, kunye nezinto ezibonakalayo ezifana neelensi kunye neefestile. kwizicelo ze-terahertz.
Iingcebiso zokuthengwa kwempahla
FZ NTD Silicon Wafer