Epitaxial (EPI) Silicon Wafer Featured Image

I-Epitaxial (EPI) I-Silicon Wafer

Inkcazo

I-Epitaxial Silicon Waferokanye i-EPI Silicon Wafer, yiwafer ye-semiconducting crystal layer efakwe kwindawo yekristale epholisiweyo ye-silicon substrate ngokukhula kwe-epitaxial.Umaleko we-epitaxial unokuba yinto efanayo kunye ne-substrate ngokukhula kwe-epitaxial e-homogeneous, okanye umaleko ongaqhelekanga kunye nomgangatho onqwenelekayo othile ngokukhula kwe-epitaxial, eyamkela iteknoloji yokukhula kwe-epitaxial iquka i-chemical vapor deposition CVD, isigaba se-epitaxy LPE, kunye ne-molecular beam. I-epitaxy MBE ukufezekisa umgangatho ophezulu wobuninzi besiphako esisezantsi kunye noburhabaxa obuphezulu bomgangatho.I-Silicon Epitaxial Wafers isetyenziswa ikakhulu kwimveliso yezixhobo eziphambili ze-semiconductor, izinto ezidityaniswe kakhulu ze-semiconductor ICs, izixhobo ezidityanisiweyo kunye nezixhobo zamandla, ezikwasetyenziselwa i-element ye-diode kunye ne-transistor okanye i-substrate ye-IC efana nohlobo lwe-bipolar, i-MOS kunye nezixhobo ze-BiCMOS.Ngapha koko, ii-epitaxial ezininzi kunye nefilimu eshinyeneyo ye-EPI silicon wafers zihlala zisetyenziswa kwi-microelectronics, photonics kunye nesicelo se-photovoltaics.

Ukuhanjiswa

I-Epitaxial Silicon Wafers okanye i-EPI Silicon Wafer kwi-Western Minmetals (SC) Corporation inokunikezelwa ngobukhulu be-4, 5 kunye ne-6 intshi (100mm, 125mm, 150mm ububanzi), kunye ne-orientation <100>, <111>, i-epilayer resistivity ye- <1ohm -cm okanye ukuya kuthi ga kwi-150ohm-cm, kunye nobukhulu be-epilayer ye<1um okanye ukuya kuthi ga kwi-150um, ukwanelisa iimfuno ezahlukeneyo ekugqityweni komphezulu we-etched okanye unyango lwe-LTO, epakishwe kwikhasethi enebhokisi yebhokisi ngaphandle, okanye njengoko kucacisiwe ngokwezifiso kwisisombululo esigqibeleleyo. .

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I-Epi Silicon Wafer

Epitaxial Silicon Wafersokanye i-EPI Silicon Wafer kwi-Western Minmetals (SC) Corporation inokunikezelwa ngobukhulu be-4, 5 kunye ne-6 intshi (100mm, 125mm, 150mm ububanzi), kunye ne-orientation <100>, <111>, i-epilayer resistivity ye- <1ohm-cm okanye ukuya kuthi ga kwi-150ohm-cm, kunye nobukhulu be-epilayer ye-<1um okanye ukuya kuthi ga kwi-150um, ukwanelisa iimfuno ezahlukeneyo ekugqityweni komphezulu we-etched okanye unyango lwe-LTO, epakishwe kwikhasethi enebhokisi yebhokisi ngaphandle, okanye njengoko kucacisiwe ngokwezifiso kwisisombululo esigqibeleleyo.

Uphawu	Si
Inombolo yeAtom	14
Ubunzima beAtom	28.09
Udidi lweNqanaba	Metalloid
Iqela, Ixesha, Block	14, 3, P
Ubume beCrystal	Idayimani
Umbala	Ingwevu emnyama
Indawo yokunyibilika	1414°C, 1687.15 K
Indawo yokubilisa	3265°C, 3538.15 K
Ukuxinana kwi-300K	2.329 g/cm³
Ukuxhathisa kwangaphakathi	3.2E5 Ω-cm
Inombolo yeCAS	7440-21-3
Inombolo yeEC	231-130-8

Hayi.	Izinto	Inkcazo esemgangathweni
1	Iimpawu eziqhelekileyo
1-1	Ubungakanani	4"	5"	6"
1-2	Ububanzi mm	100±0.5	125±0.5	150±0.5
1-3	Ukuqhelaniswa	<100>, <111>	<100>, <111>	<100>, <111>
2	Iimpawu ze-Epitaxial Layer
2-1	Indlela Yokukhula	CVD	CVD	CVD
2-2	Uhlobo lokuqhuba	P okanye P+, N/ okanye N+	P okanye P+, N/ okanye N+	P okanye P+, N/ okanye N+
2-3	Ukutyeba μm	2.5-120	2.5-120	2.5-120
2-4	Ukutyeba Ukufana	≤3%	≤3%	≤3%
2-5	Ukuxhathisa Ω-cm	0.1-50	0.1-50	0.1-50
2-6	Ukuxhathisa ukufana	≤3%	≤5%	-
2-7	Ukususwa kwe-cm-2	<10	<10	<10
2-8	Umgangatho womphezulu	Akukho chip, i-haze okanye i-orange peel ihlala, njl.
3	Phatha iimpawu zeSubstrate
3-1	Indlela Yokukhula	CZ	CZ	CZ
3-2	Uhlobo lokuqhuba	P/N	P/N	P/N
3-3	Ukutyeba μm	525-675	525-675	525-675
3-4	Ukutyeba Uniformity max	3%	3%	3%
3-5	Ukuxhathisa Ω-cm	Njengoko kufuneka	Njengoko kufuneka	Njengoko kufuneka
3-6	Ukuxhathisa ukufana	5%	5%	5%
3-7	TTV μm max	10	10	10
3-8	Zithobe μm max	30	30	30
3-9	Warp μm max	30	30	30
3-10	EPD cm-2 max	100	100	100
3-11	Iprofayile yomda	Isondezwe	Isondezwe	Isondezwe
3-12	Umgangatho womphezulu	Akukho chip, i-haze okanye i-orange peel ihlala, njl.
3-13	Icala elingasemva Gqiba	I-Etched okanye i-LTO (5000±500Å)
4	Ukupakisha	Ikhasethi ngaphakathi, ibhokisi yeebhokisi ngaphandle.

I-Silicon Epitaxial Waferszisetyenziswa ikakhulu kwimveliso yezixhobo eziphambili zesemiconductor, izinto ezidityaniswe kakhulu zesemiconductor ii-ICs, izixhobo ezidityanisiweyo kunye nezamandla, ezikwasetyenziselwa isiqalelo se-diode kunye ne-transistor okanye i-substrate ye-IC efana nohlobo lwe-bipolar, izixhobo ze-MOS kunye ne-BiCMOS.Ngapha koko, ii-epitaxial ezininzi kunye nefilimu eshinyeneyo ye-EPI silicon wafers zihlala zisetyenziswa kwi-microelectronics, photonics kunye nesicelo se-photovoltaics.