CZ Silicon Wafer

Inkcazo

CZ Single Crystal Silicon Wafer inqunyulwe ukusuka kwi-crystal silicon ingot enye itsalwa yindlela yokukhula yeCzochralski CZ, esetyenziswa kakhulu ekukhuleni kwe-silicon crystal yee-ingots ezinkulu ze-cylindrical ezisetyenziswa kwishishini lombane ukwenza izixhobo ze-semiconductor.Kule nkqubo, imbewu encinci ye-crystal silicon kunye nokunyamezela okuchanekileyo kufakwa kwibhafu etyhidiweyo ye-silicon ebushushu bayo bulawulwa ngokuchanekileyo.Ikristale yembewu itsalwa ngokucothayo ukuya phezulu ukusuka ekunyibilikeni ngesantya esilawulwa kakhulu, ukuqina kwecrystalline yee-athom ukusuka kwinqanaba lolwelo kwenzeka kwi-interface, ikristale yembewu kunye ne-crucible zijikeleziswa kumacala achaseneyo ngexesha lenkqubo yokurhoxiswa, kudala enye enkulu. isilicon yekristale enesakhiwo sekristale esigqibeleleyo sembewu.

Ngombulelo kumhlaba wemagnethi osetyenziswa kutsalo lwe-CZ ye-ingot esemgangathweni, i-Czochralski MCZ i-silicon enye yekristale ye-Czochralski inomlinganiselo ophantsi wokungacoceki, inqanaba elisezantsi le-oksijini kunye nokuchithwa, kunye nokwahluka okufanayo kokumelana nokusebenza kakuhle kubuchwepheshe obuphezulu bezixhobo ze-elektroniki kunye nezixhobo. ukuveliswa kumashishini e-elektroniki okanye e-photovoltaic.

Ukuhanjiswa

CZ okanye MCZ Single Crystal Silicon Wafer n-uhlobo kunye p-uhlobo conductivity at Western Minmetals (SC) Corporation zingahanjiswa ngobukhulu 2, 3, 4, 6, 8 kunye 12 intshi ububanzi (50, 75, 100, 125, 150, 200 kunye ne-300mm), i-orientation <100>, <110>, <111> enomphezulu ogqityiweyo ogqitywe, waqanjwa kwaye wapolishwa kwiphakheji yebhokisi yogwebu okanye ikhasethi enebhokisi yebhokisi ngaphandle.

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CZ Silicon Wafer

CZ Single Crystal Silicon Wafer yinto esisiseko kwimveliso yeesekethe ezidibeneyo, i-diodes, i-transistors, i-discrete components, esetyenziswa kuzo zonke iintlobo zezixhobo ze-elektroniki kunye nezixhobo ze-semiconductor, kunye ne-substrate kwi-epitaxial processing, i-SOI wafer substrate okanye i-semi-insulating compound wafer fabrication, ngokukodwa enkulu. Idayamitha ye-200mm, 250mm kunye ne-300mm zezona zifanelekileyo ukwenza izixhobo ezidityanisiweyo kakhulu.I-Crystal Silicon enye isetyenziselwa iiseli zelanga ngobuninzi obukhulu yimboni ye-photovoltaic, ephantse ibe yikristale egqibeleleyo isakhiwo esivelisa ukukhanya okuphezulu kokuguqulwa kombane.

Hayi.	Izinto	Inkcazo esemgangathweni
1	Ubungakanani	2"	3"	4"	6"	8"	12"
2	Ububanzi mm	50.8±0.3	76.2±0.3	100±0.5	150±0.5	200±0.5	300±0.5
3	Ukuqhuba	P okanye N okanye un-doped
4	Ukuqhelaniswa	<100>, <110>, <111>
5	Ukutyeba μm	279, 381, 425, 525, 575, 625, 675, 725 okanye njengoko kufuneka
6	Ukuxhathisa Ω-cm	≤0.005, 0.005-1, 1-10, 10-20, 20-100, 100-300 njl.
7	RRV ubuninzi	8%, 10%, 12%
8	IFlethi yokuqala/Ubude mm	Njengomgangatho we-SEMI okanye njengoko kufuneka
9	IFlethi yesibini/Ubude mm	Njengomgangatho we-SEMI okanye njengoko kufuneka
10	TTV μm max	10	10	10	10	10	10
11	I-Bow & Warp μm max	30	30	30	30	30	30
12	Umphezulu Gqiba	Njengoko-cut, L/L, P/E, P/P
13	Ukupakisha	Ibhokisi yogwebu okanye ikhasethi ngaphakathi, ibhokisi yebhokisi ngaphandle.

Uphawu	Si
Inombolo yeAtom	14
Ubunzima beAtom	28.09
Udidi lweNqanaba	Metalloid
Iqela, Ixesha, Block	14, 3, P
Ubume beCrystal	Idayimani
Umbala	Ingwevu emnyama
Indawo yokunyibilika	1414°C, 1687.15 K
Indawo yokubilisa	3265°C, 3538.15 K
Ukuxinana kwi-300K	2.329 g/cm³
Ukuxhathisa kwangaphakathi	3.2E5 Ω-cm
Inombolo yeCAS	7440-21-3
Inombolo yeEC	231-130-8

CZ okanye MCZ Single Crystal Silicon WaferUdidi lwe-n kunye nohlobo lwe-p-conductivity kwi-Western Minmetals (SC) Corporation inokuhanjiswa ngobukhulu be-2, 3, 4, 6, 8 kunye ne-12 intshi ubukhulu (50, 75, 100, 125, 150, 200 kunye ne-300mm), i-orientation <100>, <110>, <111> kunye nokugqitywa komphezulu we-as-cut, i-lapped, ifakwe kwaye iphuculwe kwiphakheji yebhokisi yogwebu okanye ikhasethi enebhokisi yebhokisi ngaphandle.