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Cadmium Arsenide Cd3As2 | GaAs InAs Nb3As2 Featured Image
  • Cadmium Arsenide Cd3As2 | GaAs InAs Nb3As2
  • Cadmium Arsenide Cd3As2 | GaAs InAs Nb3As2
  • Cadmium Arsenide Cd3As2 | GaAs InAs Nb3As2
  • Cadmium Arsenide Cd3As2 | GaAs InAs Nb3As2
  • Cadmium Arsenide Cd3As2 | GaAs InAs Nb3As2

ICadmium Arsenide Cd3As2|I-GaAs InAs Nb3As2

Inkcazo

ICadmium Arsenide Cd3As25N 99.999%,umbala omnyama ongwevu, kunye nobuninzi be-6.211g / cm3, indawo yokunyibilika 721°C, imolekyuli 487.04, CAS12006-15-4, inyibilika kwi-nitric acid HNO3 kunye nokuzinza emoyeni, yimathiriyeli edityanisiweyo edityanisiweyo ye-cadmium ecocekileyo kunye ne-arsenic.I-Cadmium Arsenide yi-semimetal ye-inorganic kusapho lwe-II-V kwaye ibonisa i-Nernst Effect.Ikristale yeCadmium Arsenide ekhuliswe yindlela yokukhula ye-Bridgman, isambuku esingafakwanga isixa seDirac semimetal structure, yi-N-type II-V semiconductor ewohlokileyo okanye isemiconductor emxinwa ene-gap ehamba phambili, ubunzima obuphantsi, kunye ne-non-parabolic conduction. iqela.ICadmium Arsenide Cd3As2 okanye i-CdAs iyikristale eyomeleleyo kwaye ifumana usetyenziso olungakumbi nangakumbi kwi-semiconductor nakwintsimi ye-optic yefoto njengakwizixhobo ze-infrared zisebenzisa i-Nernst effect, kwifilm-film ebhityileyo i-dynamic sensors, i-laser, i-LED ekhupha ukukhanya, amachaphaza e-quantum, ukuya. yenza i-magnetoresistors nakwi-photodetectors.Iikhompawundi ze-Arsenide ze-Arsenide GaAs, i-Indium Arsenide InAs kunye ne-Niobium Arsenide NbAs okanye i-Nb5As3Fumana isicelo esingakumbi njengezinto ze-electrolyte, izinto ze-semiconductor, umboniso we-QLED, intsimi ye-IC kunye nezinye izinto eziphathekayo.

Ukuhanjiswa

ICadmium Arsenide Cd3As2kunye neGallium Arsenide GaAs, i-Indium Arsenide InAs kunye ne-Niobium Arsenide NbAs okanye i-Nb5As3kwi-Western Minmetals (SC) Corporation kunye ne-99.99% 4N kunye ne-99.999% i-5N ubunyulu bubukhulu be-polycrystalline micropowder -60mesh, -80mesh, i-nanoparticle, i-lump 1-20mm, i-granule 1-6mm, i-chunk, i-blank, i-crystal eninzi kunye ne-crystal enye njl. ., okanye njengeenkcukacha ezilungiselelwe ukufikelela kwisisombululo esigqibeleleyo.


Iinkcukacha

Iithegi

Inkcazo yobuGcisa

Arsenide Compounds

Arsenide Compounds ubukhulu becala bhekisa kwizinto zesinyithi kunye neekhompawundi ze-metalloid, ezinokwakheka kwe-stoichiometric eziguqukayo ngaphakathi koluhlu oluthile ukwenza isisombululo esiluqilima esisekwe khompawundi.Ikhompawundi ye-Inter-metallic ineempawu zayo ezintle phakathi kwesinyithi kunye ne-ceramic, kwaye ibe lisebe elibalulekileyo lezinto ezintsha zesakhiwo.Ngaphandle kweGallium Arsenide GaAs, i-Indium Arsenide InAs kunye ne-Niobium Arsenide NbAs okanye i-Nb5As3inokuthi yenziwe ngohlobo lomgubo, igranule, intlama, ibha, ikristale kunye nesubstrate.

ICadmium Arsenide Cd3As2kunye neGallium Arsenide GaAs, i-Indium Arsenide InAs kunye ne-Niobium Arsenide NbAs okanye i-Nb5As3kwi-Western Minmetals (SC) Corporation kunye ne-99.99% 4N kunye ne-99.999% i-5N ubunyulu bubukhulu be-polycrystalline micropowder -60mesh, -80mesh, i-nanoparticle, i-lump 1-20mm, i-granule 1-6mm, i-chunk, i-blank, i-crystal eninzi kunye ne-crystal enye njl. ., okanye njengeenkcukacha ezilungiselelwe ukufikelela kwisisombululo esigqibeleleyo.

CM-W2

GaAs-W3

Hayi.

Into

Inkcazo esemgangathweni

Ubunyulu

Ukungcola PPM Max nganye

Ubungakanani

1

ICadmium ArsenideCd3As2

5N

 Ag/Cu/Ca/Mg/Sn/Fe/Cr/Bi 0.5, Ni/S 0.2, Zn/Pb 1.0

-60mesh -80mesh umgubo, 1-20mm intlama, 1-6mm igranule

2

Gallium Arsenide GaAs

5N 6N 7N

 Ukuqulunqwa kwe-GaAs kuyafumaneka xa kuceliwe

3

Niobium Arsenide NbAs

3N5

 Ukuqulunqwa kwe-NbAs kuyafumaneka xa kuceliwe

4

I-Indium Arsenide InAs

5N 6N

 I-InAs Composition iyafumaneka xa iceliwe

5

Ukupakisha

I-500g okanye i-1000g kwibhotile ye-polyethylene okanye ibhegi edibeneyo, ibhokisi yebhokisi ngaphandle

Gallium Arsenide

GaAs

Gallium Arsenide GaAs, i-III-V ikhompawundi ngqo-isithuba semiconductor impahla ene-zinc blende crystal structure, idityaniswe yi-gallium yococeko oluphezulu kunye nezinto ze-arsenic, kwaye inokucolwa kwaye yenziwe ibe sisiluphu esisicaba kwaye ingenanto ukusuka kwi-crystalline ingot enye ekhuliswe yindlela ye-Vertical Gradient Freeze (VGF) .Enkosi kukushukuma kwayo kweholo kunye namandla aphezulu kunye nokuzinza kobushushu, ezo zixhobo zeRF, ii-microwave ICs kunye nezixhobo ze-LED ezenziwe yiyo zonke ziphumeza ukusebenza okuhle kwiindawo zabo zonxibelelwano.Ngeli xesha, ukusebenza kakuhle kokuhanjiswa kokukhanya kwe-UV kukwavumela ukuba ibe yinto eqinisekisiweyo esisiseko kwishishini le-Photovoltaic.I-Gallium Arsenide GaAs wafer eWestern Minmetals (SC) Corporation inokuhanjiswa ukuya kuthi ga kwi-6" okanye i-150mm ububanzi kunye ne-6N 7N ubunyulu, kunye ne-Gallium Arsenide mechanical grade substrate nazo ziyafumaneka. ye-99.999% 5N, 99.9999% 6N, 99.99999% 7N ebonelelweyo evela kwi-Western Minmetals (SC) Corporation nazo ziyafumaneka okanye njengeenkcukacha ezilungiselelweyo xa ziceliwe.

Indium Arsenide

InAs

I-Indium Arsenide INAs, i-band-gap semiconductor ye-crystallizing kwisakhiwo se-zinc-blende, ihlanganiswe yi-indium ecocekileyo ephezulu kunye nezinto ze-arsenic, ezikhuliswe yi-Liquid Encapsulated Czochralski (LEC) indlela, inokunqunyulwa kwaye yenziwe ibe yi-wafer evela kwi-crystalline ingot enye.Ngenxa yoxinaniso oluphantsi lokuxinana kodwa i-lattice engaguqukiyo, i-InAs yeyona nto ifanelekileyo yokuxhasa ngakumbi i-InAsSb, i-InAsPSb & InNAsSb, okanye i-AlGaSb superlattice structure.Ke ngoko, idlala indima ebalulekileyo kwi-2-14 μm yoluhlu lwezixhobo ezikhupha izixhobo ze-infrared.Ngaphandle koko, ukuhamba kweholo ephezulu kodwa i-bandgap yamandla emxinwa ye-InAs ikwavumela ukuba ibe yeyona nto iphambili kumacandelo eholo okanye ezinye izixhobo ze-laser kunye nezixhobo zemitha.I-Indium Arsenide InAs kwi-Western Minmetals (SC) Corporation ngokucoceka kwe-99.99% 4N, 99.999% 5N, 99.9999% 6N ingahanjiswa kwi-substrate ye-2 "3" 4 "ububanzi. Okwangoku, i-Indium Arsenide polycrystalline lump kwi-SC Minmetal ) Iqumrhu likwakhona okanye njengoko kuchaziwe kwisicelo.

Niobium Arsenide

NbAs-2

Niobium Arsenide Nb5As3 or NbAs,off-white okanye grey crystalline eqinileyo, CAS No.12255-08-2, formula ubunzima 653.327 Nb5As3kunye ne-167.828 NbAs, yikhompawundi yokubini ye-Niobium kunye ne-Arsenic ene-NbAs, Nb5As3, NbAs4 ... njalo njalo idityaniswe yindlela ye-CVD, ezi tyuwa ziqinileyo zinamandla aphezulu e-lattice kwaye ziyityhefu ngenxa yetyhefu engokwemvelo ye-arsenic.Uhlalutyo lobushushu obuphezulu lubonisa i-NdAs ebonisa ukuguquguquka kwe-arsenic xa kushushu. I-Niobium Arsenide, i-Weyl semimetal, luhlobo lwe-semiconductor kunye ne-photoelectric material kwizicelo ze-semiconductor, i-photo optic, i-laser light-emitting diode, amachaphaza e-quantum, i-optical kunye ne-pressure sensors, njenge-intermediates, kunye nokwenza i-superconductor njl. Niobium Arsenide Nb5As3okanye ii-NbAs kwi-Western Minmetals (SC) Corporation enobunyulu be-99.99% 4N inokuhanjiswa ngokwemilo yomgubo, igranule, intlama, ithagethi kunye nekristale eninzi njl. , indawo eyomileyo nepholileyo.

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Cd2As3 Nb2As3I-GaAs InAs

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