I-Imec, uphando lwaseBelgium kunye ne-innovation hub, ibonise izixhobo zokuqala ezisebenzayo ze-GaAs-based heterojunction bipolar transistor (HBT) kwi-300mm Si, kunye ne-CMOS-ehambelana ne-GaN-based based based devices kwi-200mm Si ye-mm-wave applications.
Iziphumo zibonisa amandla azo zombini ii-III-V-on-Si kunye ne-GaN-on-Si njengetekhnoloji ehambelana ne-CMOS yokwenza iimodyuli ze-RF zangaphambili ngaphaya kwezicelo ze-5G.Ziye zaboniswa kwinkomfa ye-IEDM yonyaka ophelileyo (ngoDisemba 2019, eSan Francisco) kwaye iya kuboniswa kwintetho ephambili ka-Imec kaMichael Peeters malunga nonxibelelwano lwabathengi ngaphaya kwebroadband kwi-IEEE CCNC (10-13 Jan 2020, Las Vegas).
Kunxibelelwano olungenazingcingo, kunye ne-5G njengesizukulwana esilandelayo, kukho ukutyhala ukuya kwii-frequencies eziphezulu zokusebenza, ukusuka kwiibhendi ezixineneyo ze-sub-6GHz ukuya kwii-mm-wave bands (nangaphaya).Ukuqaliswa kwezi bhendi ze-mm-wave zinempembelelo ebalulekileyo kwiziseko zophuhliso lwenethiwekhi ye-5G kunye nezixhobo eziphathwayo.Kwiinkonzo eziphathwayo kunye noFixed Wireless Access (FWA), oku kuguqulela kwiimodyuli eziya zisiba nzima ngaphambili ezithumela isignali kunye nokusuka kwi-eriyali.
Ukuze ukwazi ukusebenza kwii-mm-wave frequencies, i-RF front-end modules kuya kufuneka idibanise isantya esiphezulu (ivumela izinga ledatha ye-10Gbps nangaphezulu) kunye namandla aphezulu aphumayo.Ukongeza, ukuphunyezwa kwazo kwii-handsets eziphathwayo kubeka iimfuno eziphezulu kwifom yazo kunye nokusebenza kakuhle kwamandla.Ngaphaya kwe-5G, ezi mfuno azinakufikelelwa ngezona modyuli zanamhlanje eziphambili zeRF ezixhomekeke kwiindlela ezahlukeneyo zobuchwepheshe phakathi kwezinye ii-HBT ezisekelwe kwii-GaAs zokukhulisa amandla - ezikhuliswe kwii-substrates ze-GaAs ezincinci kunye nezibizayo.
"Ukuvumela iimodyuli ze-RF zesizukulwana esilandelayo ngaphaya kwe-5G, i-Imec iphonononga iteknoloji ye-III-V-on-Si ehambelana ne-CMOS", utshilo uNadine Collaert, umlawuli wenkqubo e-Imec."I-Imec ijonge ukudityaniswa kwamacandelo angaphambili (njengama-amplifiers kunye nokutshintsha) kunye nezinye iisekethe ezisekelwe kwi-CMOS (ezifana nolawulo lweesekethe okanye itekhnoloji ye-transceiver), ukunciphisa iindleko kunye nefom yefom, kunye nokwenza i-topology entsha yesekethe ye-hybrid. ukulungisa ukusebenza kunye nokusebenza kakuhle.I-Imec ihlola iindlela ezimbini ezahlukeneyo: (1) i-InP kwi-Si, ijolise kwi-mm-wave kunye ne-frequencies ngaphezu kwe-100GHz (izicelo ze-6G zexesha elizayo) kunye (2) nezixhobo ezisekelwe kwi-GaN kwi-Si, ekujoliswe kuyo (kwisigaba sokuqala) i-mm-wave ephantsi. amabhendi kunye nokujongana nezicelo ezifuna uxinaniso lwamandla aphezulu.Kuzo zombini iindlela, ngoku sifumene izixhobo zokuqala ezisebenzayo ezineempawu zokusebenza ezithembisayo, kwaye sichonge iindlela zokuphucula ukusebenza kwazo.
Izixhobo ezisebenzayo ze-GaAs/InGaP HBT ezikhuliswe kwi-300mm Si zibonakaliswe njengenyathelo lokuqala ekwenziweni kwezixhobo ezisekelwe kwi-InP.Isitaki sesixhobo esingenasiphako esingaphantsi kwe-3x106cm-2 soxinaniso lwe-threading dislocation sifunyenwe ngokusebenzisa inkqubo ye-Imec ekhethekileyo ye-III-V ye-nano-ridge engineering (NRE).Izixhobo zisebenza ngcono kakhulu kunezixhobo zereferensi, kunye nee-GaAs ezenziwe kwii-substrates ze-Si ezine-strain relaxed buffer (SRB) umaleko.Kwinqanaba elilandelayo, izixhobo ezisekelwe kwi-InP ezisekelwe phezulu (i-HBT kunye ne-HEMT) ziya kuphononongwa.
Umfanekiso ongentla ubonisa indlela ye-NRE yokudibanisa i-III-V / CMOS kwi-300mm Si: (a) ukubunjwa kwe-nano-trench;iziphene zibambeke kwindawo emxinwa yomsele;(b) Ukukhula kwesitaki se-HBT kusetyenziswa i-NRE kunye (c) neendlela ezahlukeneyo zoyilo lokudibanisa isixhobo se-HBT.
Ngaphezu koko, izixhobo ezihambelana ne-CMOS ze-GaN/AlGaN-zisekelwe kwi-200mm Si zenziwe ngokuthelekisa izakhiwo ezintathu ezahlukeneyo zezixhobo-i-HEMTs, ii-MOSFET kunye ne-MISHEMTs.Kwaboniswa ukuba izixhobo ze-MISHEMT zisebenza ngaphezu kwezinye iintlobo zesixhobo ngokwemigaqo yokulinganisa idivaysi kunye nokusebenza kwengxolo yokusebenza okuphezulu-frequency.I-Peak cut-off frequencies of fT/fmax around 50/40 ifunyenwe kwi-300nm ubude besango, ehambelana nezixhobo ezixeliweyo ze-GaN-on-SiC.Ngaphandle kokunyuka kobude besango, iziphumo zokuqala kunye ne-AlInN njengesixhobo sokuthintela zibonisa amandla okuphucula ngakumbi ukusebenza, kwaye ke, ukwandisa ukuhamba rhoqo kwesixhobo kwiibhendi ezifunekayo ze-mm-wave.
Ixesha lokuposa: 23-03-21